Heterostructures based on the GeSn nanocompound have high impact on integrated photonics devices.

Metal-induced crystallization of amorphous silicon is a promising technique for developing high-quality and cheap optoelectronic devices. Many attempts tried to enhance the crystal growth of polycrystalline silicon via aluminum-induced crystallization at different annealing times and temperatures. In this research, thin films of aluminum/silicon (Al/Si) and aluminum/silicon/tin (Al/Si/Sn) layers were fabricated using the thermal evaporation technique with a designed wire tungsten boat. MIC of a:Si was detected at annealing temperature of 500 °C using X-ray diffraction, Raman spectroscopy, and field emission scanning electron microscopy. The crystallinity of the films is enhanced by increasing the annealing time. In the three-layer thin films, MIC occurs because of the existence of both Al and Sn metals forming highly oriented (111) silicon. Nanocrystalline silicon with dimensions ranged from 5 to 300 nm is produced depending on the structure and time duration. Low surface reflection and the variation of the optical energy gap were detected using UV–vis spectroscopy. Higher conductivities of Al/Si/Sn films than Al/Si films were observed because of the presence of both metals. Highly rectifying ideal diode manufactured from Al/Si/Sn on the FTO layer annealed for 24 h indicates that this device has a great opportunity for the optoelectronic device applications.

Solubility of Sn in Ge network gives it a preference for photonic applications, because of the direct transition in GeSn alloy. Here, we employed the metal-induced crystallization (MIC) process of amorphous Ge and Si via Sn as a novel mechanism to incorporate Sn inside Ge and Si networks. (Al/Si/Sn/Ge/Sn) and (Al/Ge/Sn/Ge/Sn) multilayers are deposited by thermal vacuum evaporation on different substrates. The devices are annealed under low vacuum at 500 °C to incorporate the oxygen for band-gap tuning. The structure of Ge-doped nanocrystals is investigated. The direct transition and band-gap values have been estimated using diffuse reflectance spectroscopy and photoluminescence (PL) measurements. PL indicated that the junctions have emissions from visible to NIR regions that make them promising as optically pumped white-light sources as well as waveguide applications, and the impact of the base substrate on enhancing the emission has been investigated via PL measurements. Electroluminescence measurements show that the prepared heterostructures on fluorine-doped tin oxide (FTO) substrate have sharp random lasing spikes over the range of PL samples spectra as the sample can lase randomly by light scattering through the Ge-doped nanocrystalline materials. The charge carrier lifetime measurements show high lifetime for the prepared sample. These give them the chance to be a candidate for white-light random laser diode applications.

Solubility of Sn in Ge has the most impact in the emission characteristics of direct band gap GeSn alloy. Here, we employed the metal induced crystallization (MIC) process of amorphous Ge and Si via Sn as a novel mechanism to incorporate Sn inside Ge and Si networks. (Al/Si/Sn/Ge/Sn) and (Al/Ge/Sn/Ge/Sn) multilayers are deposited by thermal vacuum evaporation on different substrates. The devices are annealed under low vacuum at 500 ºC. The Ge doped nanocrystals structure is investigated. The direct transition and band gap values have been estimated using diffuse reflectance spectroscopy and Photoluminescence (PL) measurements. PL indicted that the junctions have emissions from visible to NIR regions that make them promise in white light laser sources as well as waveguiding applications. Charge carrier lifetime and EL measurements show high lifetime and very sharp emission, respectively indicating that the prepared structure is a candidate for white laser diode applications.

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Metal induced crystallization (MIC), strained Ge doped with Sn and As, p–i–n photodetectors, tuned direct transitions, spectral responsivity.

Correction for ‘Controlling barrier height and spectral responsivity of p–i–n based GeSn photodetectors via arsenic incorporation’ by Mohamed A. Nawwar et al., RSC Adv., 2023, 13, 9154–9167, https://doi.org/10.1039/D3RA00805C.

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