Measurements to 320 GHz of millimetre-wave waveguide components made by high precision and economic micro-machining techniques

Chow, W.H.; Champion, Audrey; Steenson, D.P.

doi:10.1109/hfpsc.2003.1242314

Cited by 15 publications

(11 citation statements)

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“…To form the waveguide channel, which is then coated with metal, two different methods have been reported in [6] and [7]. In [7], the waveguide channel is formed by UV exposure of a SU-8 photoresist layer. The second method [6] uses deep reactive ion etching (DRIE) of a bulk Silicon (Si) to fabricate the waveguide channel.…”

Section: Introductionmentioning

confidence: 99%

Silicon-on-Glass Dielectric Waveguide—Part II: For THz Applications

Ranjkesh

Basha

Taeb

et al. 2015

IEEE Trans. THz Sci. Technol.

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A low-loss sub-millimeter-wave/THz integrated dielectric waveguide is presented. The proposed waveguide consists of a highly resistive Silicon (Si) guiding channel bonded to a glass substrate. To reduce the waveguide insertion loss due to the glass substrate, part of the substrate below the Si guiding channel is etched. A periodic configuration of supporting beams is used to hold the Si guiding channel over the glass substrate. A low-cost and high-precision fabrication process, which is fully compatible with current Si-based fabrication technologies, is developed for the proposed waveguide. Numerical simulations and experiments are conducted to investigate the performance of the proposed waveguide. Measured attenuation constant of the proposed waveguide is 0.0346 dB/ (average value) over the 440-500 GHz band.Index Terms-Dielectric waveguide, THz integrated circuit, Silicon-on-Glass (SOG) waveguide.

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Section: Introductionmentioning

confidence: 99%

Silicon-on-Glass Dielectric Waveguide—Part II: For THz Applications

Ranjkesh

Basha

Taeb

et al. 2015

IEEE Trans. THz Sci. Technol.

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“…A wide range of applications in high-resolution imaging and broadband communication systems are finding their ways in the mm-wave band. Different technologies were developed by many researchers to accommodate the huge demand of systems in the mm-wave frequency-band such as integrated metallic waveguide structures [1]- [3], a dielectric insulated image guide [4], and Substrate Integrated Image Guide (SIIG) [5].…”

Section: Introductionmentioning

confidence: 99%

Novel D-band Si-based integrated platform for millimeter wave

Basha

Samir

Naeini

et al. 2014

2014 44th European Microwave Conference

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A low-cost and low-loss Silicon-on-Insulator (SOI) integrated platform is proposed for millimeter-wave (mm-wave) applications. The proposed platform supports mm-wave components in the D-band using dielectric image guide structure. The SOI mm-wave integrated platform uses high resistivity Silicon wafers for very low-loss in the D-Band. All passive components can be fabricated on the same platform with high potential of integration of active devices. There is no need for post-fabrication assembly steps for complex systems, which will provide high accuracy of placement of different components on the same platform. The platform is theoretically and experimentally investigated. The fabrication process is a simple one-mask fabrication process composed of deep reactive ion etching of the device layer of the SOI wafer. Design of dielectric image guide in the D-Band is performed. The simulation results show attenuation better than 0.25 dB/cm. Fabrication and experimental measurements are performed at 60 and 100 GHz.

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“…At the frequency range of interest, around 1µm 2 of metal is required to satisfy the 5 skin depths requirement. Using a combination of sputtered Au seed layer and Au plating with low average plating current density, surfaces with R a = 6.21nm and R q = 7.47 were obtained, as opposed to R a = 5.10nm and R q = 6.15nm for sputtered layers.T his method has been successfully used in the past for other waveguide circuits [8], [9].…”

Section: Block Fabricationmentioning

confidence: 99%