Novel D-band Si-based integrated platform for millimeter wave

Abstract

A low-cost and low-loss Silicon-on-Insulator (SOI) integrated platform is proposed for millimeter-wave (mm-wave) applications. The proposed platform supports mm-wave components in the D-band using dielectric image guide structure. The SOI mm-wave integrated platform uses high resistivity Silicon wafers for very low-loss in the D-Band. All passive components can be fabricated on the same platform with high potential of integration of active devices. There is no need for post-fabrication assembly steps for complex systems, which will provide high accuracy of placement of different components on the same platform. The platform is theoretically and experimentally investigated. The fabrication process is a simple one-mask fabrication process composed of deep reactive ion etching of the device layer of the SOI wafer. Design of dielectric image guide in the D-Band is performed. The simulation results show attenuation better than 0.25 dB/cm. Fabrication and experimental measurements are performed at 60 and 100 GHz.

Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes

“…However, Si platform integration must be taken into consideration in order for it to become compatible with industrial manufacturing [1]. The Si-based platform integration is not limited to Ge and III-V CMOS options [2], but also extends to millimeter-wave (mm-wave) [3], III-V for photonic [4] and low-cost photovoltaic [5] applications, monolithic integration of CMOS and optoelectronic devices [6] and III-V lasers [7]. Additionally, the expertize from the Si devices, i.e.…”

Ground Plane Impact on Performance of Relaxed Ge FinFETs

“…The Si-platform integration enables to combine on the same wafer a variety of semiconductor materials (Si, C, Ge, III-V materials) for different purposes, such as photonics and photovoltaics [4], [5], [7]- [10]. On the other hand, the epitaxial growth of a different material on silicon is a critical challenge due to the lattice mismatch resulting in threading dislocations (TD) and misfit dislocations (MD) into the grown film [11].…”

Evolution of DIG integrated platform for millimeter-wave applications

“…Substrate integrated waveguide (SIW) [1], substrate integrated image guide (SIIG) [2], and dielectric image guide (DIG) [3][4][5][6] are technologies started to utilize the MM-wave with different working principal and performance. DIG is considered one of the promising technologies capable of working up to the Dband with very low-loss [7]. The DIG platform is based on high resistivity SOI wafer with handle wafer much thinner than the device wafer in order to keep the electric field confined in the rectangular dielectric waveguide fabricated from the device layer.…”