Measurements of Rayleigh scattering cross sections

Lang, J.; Hardcastle, R. A.; Spurrett, P. H.

doi:10.1088/0022-3727/20/9/003

Cited by 13 publications

(18 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The electrical characterization consists of static capacitance spectroscopy (C-V profiling) and time-resolved capacitance spectroscopy, DLTS. [27] DLTS allows for the determination of activation energy and capture cross-section. Since hole localization in the QDs reduces the capacitance of the p-n junction, C-V profiling can be used to determine the voltages at which holes are captured into and released from the QDs, [28] thereby defining the interval of interest for DLTS.…”

Section: Electrical Characterizationmentioning

confidence: 99%

MOVPE‐Growth of InGaSb/AlP/GaP(001) Quantum Dots for Nanoscale Memory Applications

Sala

Arikan

Bonato

et al. 2018

Physica Status Solidi (b)

View full text Add to dashboard Cite

The structural and optical properties of InGaSb/GaP(001) type‐II quantum dots (QDs) grown by metalorganic vapor phase epitaxy (MOVPE) are studied. Growth strategies as growth interruption (GRI) after deposition of InGaSb and Sb‐flush prior to QD growth are used to tune the structural and optical properties of InGaSb QDs. The Sb‐flush affects the surface diffusion leading to more homogeneous QDs and to a reduction of defects. A ripening process during GRI occurs, where QD size is increased and QD‐luminescence remarkably improved. InGaSb QDs are embedded in GaP n + p‐diodes, employing an additional AlP barrier, and characterized electrically. A localization energy of 1.15 eV for holes in QDs is measured by using deep‐level transient spectroscopy (DLTS). The use of Sb in QD growth is found to decrease the associated QD capture cross‐section by one order of magnitude with respect to the one of In0.5Ga0.5As/GaP QDs. This leads to a hole storage time of almost 1 h at room temperature, which represents to date the record value for MOVPE‐grown QDs, making MOVPE of InGaSb/GaP related QDs a promising technology for QD‐based nano‐memories.

show abstract

Section: Electrical Characterizationmentioning

confidence: 99%

MOVPE‐Growth of InGaSb/AlP/GaP(001) Quantum Dots for Nanoscale Memory Applications

Sala

Arikan

Bonato

et al. 2018

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…Also, defects with a higher activation energy can be observed in the same temperature range than by admittance spectroscopy. The conventional DLTS method [36] was chosen to characterize silicon samples.…”

Section: Resultsmentioning

confidence: 99%

Effect of Cryogenic Dry Etching on Minority Charge Carrier Lifetime in Silicon

Kudryashov

Gudovskikh

Baranov

et al. 2019

Physica Status Solidi (a)

View full text Add to dashboard Cite

Micro‐ and nanostructured silicon surface application is a promising way of photovoltaic development. An enhancement of optical absorption in solar cells can be achieved, for example, using vertically aligned silicon nanostructures with high aspect ratios. Cryogenic plasma etching is a suitable method for such structures' formation; however, there is still lack of data describing an effect of cryogenic inductively coupled plasma (ICP) etching on defect formation in silicon (Si). The defects may act as recombination centers, leading to solar cell characteristics degradation. Herein, the cryogenic dry etching effects on defect formation in float‐zone (FZ) n‐type silicon substrates and on the photovoltaic properties of solar cells made of plasma‐etched silicon substrate are presented. The decrease in low‐injection minority carrier lifetime in silicon from 0.85 to 0.55 ms is observed by photoluminescence decay after the ICP dry etching at −140 °C. This leads to an open‐circuit voltage drop for the (p)a‐Si:H/(n)c‐Si/(n)a‐Si:H heterojunction structure from 680 to 630 mV. A detailed study of the defect properties by deep‐level transient spectroscopy (DLTS), numerical simulation, and its behavior after wet etching and thermal annealing is presented.

show abstract

“…The obtained value of N CV corresponds to the free carrier concentration at the edge of the space charge region, W, that is simply obtained from the capacitance as W ¼ e 0 e r /C. DLTS is an attractive method for the exploration of defect levels in semiconductors, [11] which allows one to estimate their important properties: activation energy (E a ), namely the energy position of the defect with respect to the band edge, capture cross-section (σ a ) and concentration (n a ). An automated setup based on a Boonton-7200B capacitance bridge was used for measurements by the classical DLTS method in our experiments.…”

Section: Samples and Methodsmentioning

confidence: 99%

Influence of PE‐ALD of GaP on the Silicon Wafers Quality

Baranov

Gudovskikh

Kudryashov

et al. 2017

Physica Status Solidi (a)

View full text Add to dashboard Cite

An attractive method of low‐temperature plasma‐enhanced atomic layer deposition (PE‐ALD) of GaP on silicon wafer was recently proposed. In the present paper, the influence of the growth process on the quality of silicon wafers is explored by space charge capacitance techniques, C–V profiling and deep level transient spectroscopy (DLTS). No DLTS peak is observed for PE‐ALD GaP deposited onto n‐type wafer, meaning that the defect concentration is very low (less than 1 × 1012 cm−3) and that the growth process does not affect the properties of the n‐Si wafer. For boron‐doped p‐type silicon, C–V profiling shows that there is no deactivation of boron doping after the PE‐ALD process, as could have been expected from the presence of hydrogen in the plasma. Measurements on the reference Schottky diodes formed on the p‐type Si wafer reveal the presence of the well‐known Fe interstitial defects at the position EV + 0.38 eV with a concentration of 3 × 1013 cm−3. PE‐ALD of GaP leads to a modification of the response of this defect and to the appearance of another response in the low temperature range, possibly related to changes in the Fe interstitial defect environment or configuration. However, deep‐levels were not detected in p‐Si after PE‐ALD, meaning that the quality of p‐Si does not degrade.

show abstract

Measurements of Rayleigh scattering cross sections

Cited by 13 publications

References 16 publications

MOVPE‐Growth of InGaSb/AlP/GaP(001) Quantum Dots for Nanoscale Memory Applications

MOVPE‐Growth of InGaSb/AlP/GaP(001) Quantum Dots for Nanoscale Memory Applications

Effect of Cryogenic Dry Etching on Minority Charge Carrier Lifetime in Silicon

Influence of PE‐ALD of GaP on the Silicon Wafers Quality

Contact Info

Product

Resources

About