Influence of PE‐ALD of GaP on the Silicon Wafers Quality

Baranov, Artem; Gudovskikh, A. S.; Kudryashov, D. A.; Морозов, И. А.; Можаров, А. М.; Nikitina, E. V.; Zelentsov, K. S.; Darga, Arouna; Gall, Sylvain Le; Kleider, Jean‐Paul

doi:10.1002/pssa.201700685

Cited by 2 publications

(3 citation statements)

References 20 publications

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“…To investigate the defects properties in the silicon substrates after dry etching, the Schottky diode structures were fabricated. [30] The same bottom ohmic contact with the (n)a-Si:H layer as for the solar cell structures described previously was formed on the bottom side. To fabricate Schottky contact, 50 nm of Au was thermally evaporated on the top side using free mask with hole diameters of 0.5 and 1 mm.…”

Section: Methodsmentioning

confidence: 99%

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Effect of Cryogenic Dry Etching on Minority Charge Carrier Lifetime in Silicon

Kudryashov

Gudovskikh

Baranov

et al. 2019

Physica Status Solidi (a)

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Micro‐ and nanostructured silicon surface application is a promising way of photovoltaic development. An enhancement of optical absorption in solar cells can be achieved, for example, using vertically aligned silicon nanostructures with high aspect ratios. Cryogenic plasma etching is a suitable method for such structures' formation; however, there is still lack of data describing an effect of cryogenic inductively coupled plasma (ICP) etching on defect formation in silicon (Si). The defects may act as recombination centers, leading to solar cell characteristics degradation. Herein, the cryogenic dry etching effects on defect formation in float‐zone (FZ) n‐type silicon substrates and on the photovoltaic properties of solar cells made of plasma‐etched silicon substrate are presented. The decrease in low‐injection minority carrier lifetime in silicon from 0.85 to 0.55 ms is observed by photoluminescence decay after the ICP dry etching at −140 °C. This leads to an open‐circuit voltage drop for the (p)a‐Si:H/(n)c‐Si/(n)a‐Si:H heterojunction structure from 680 to 630 mV. A detailed study of the defect properties by deep‐level transient spectroscopy (DLTS), numerical simulation, and its behavior after wet etching and thermal annealing is presented.

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Section: Methodsmentioning

confidence: 99%

“…To investigate the defects properties in the silicon substrates after dry etching, the Schottky diode structures were fabricated . The same bottom ohmic contact with the (n)a‐Si:H layer as for the solar cell structures described previously was formed on the bottom side.…”

Section: Methodsmentioning

confidence: 99%

Effect of Cryogenic Dry Etching on Minority Charge Carrier Lifetime in Silicon

Kudryashov

Gudovskikh

Baranov

et al. 2019

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

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“…On the other hand hydrogen plasma could provide acceptor de‐activation in B doped p‐type Si and even damage the Si surface . Our previous study demonstrated that no significant influence of the growth process on the volume properties of silicon wafers could be observed by space charge capacitance techniques . However, to our knowledge the interface properties of GaP/Si heterojunctions formed by low temperature plasma‐assisted technique were not studied so far.…”

Section: Introductionmentioning

confidence: 92%

Interface Properties of GaP/Si Heterojunction Fabricated by PE‐ALD

Gudovskikh

Uvarov

Морозов

et al. 2018

Physica Status Solidi (a)

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The properties of n‐GaP/p‐Si interface as well as their influence on solar cell performance are studied for GaP layers grown by low‐temperature (380 °C) plasma‐enhanced atomic layer deposition (PE‐ALD). The influence of different plasma treatments and RF power values are explored. The increase of RF power leads to a growth transition from amorphous (a‐GaP) to microcrystalline GaP (μc‐GaP) with either amorphous‐GaP/Si or epitaxial‐GaP/Si interface, respectively. However, when continuous hydrogen plasma is used the amorphous‐GaP/Si interface exhibits better photovoltaic performance compared to the epitaxial one. Values of open circuit voltage, Voc = 0.45–0.55 V and internal quantum efficiencies, IQE > 0.9 are obtained for amorphous‐GaP/Si interfaces compared to Voc = 0.25–0.35 V and IQE < 0.45 for epitaxial‐GaP/Si interfaces. According to admittance spectroscopy and TEM studies the near‐surface (30–50 nm) area of the Si substrate is damaged during growth with high RF power of hydrogen plasma. A hole trap at the level of EV + (0.33 ± 0.02) eV is detected by admittance spectroscopy in this damaged Si area. The damage of Si is not observed by TEM when the deposition of the structures with epitaxial‐GaP/Si interface is realized by a modified process without hydrogen plasma indicating that the damage of the near‐surface area of Si is related to hydrogen plasma interaction.

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Influence of PE‐ALD of GaP on the Silicon Wafers Quality

Cited by 2 publications

References 20 publications

Effect of Cryogenic Dry Etching on Minority Charge Carrier Lifetime in Silicon

Effect of Cryogenic Dry Etching on Minority Charge Carrier Lifetime in Silicon

Interface Properties of GaP/Si Heterojunction Fabricated by PE‐ALD

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