Measurement of the transient junction temperature in MOSFET devices under operating conditions

Barlini, Davide; Ciappa, Mauro; Mermet-Guyennet, Michel; Fichtner, W.

doi:10.1016/j.microrel.2007.07.008

Cited by 51 publications

(26 citation statements)

References 4 publications

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“…The load current starts to rise at time tTH and reaches its maximum at t1, causing the VDS across the MOSFET to fall to its on-state value thereby charging the Miller capacitance between t1 and t2. The threshold voltage and time it takes for VGS to rise to VTH (tTHt0) have been presented as TSEPs for silicon MOSFETs [19]. Equation (3) models tTH.…”

Section: Analytical Modelling Of the Gate And Drain Current Tempementioning

confidence: 99%

“…In [16], harmonic analysis of an IGBT converter output is used as a TSEP whereas in [17,18] the temperature dependency of the gate current in MOSFETs and IGBTs has been used as a TSEP for condition monitoring with promising results demonstrated. In the case of Si MOSFETs, the switching rate during turn ON was evaluated as a TSEP in [19], and the characteristics of SiC MOSFETs [20][21][22] suggest that the dynamic properties of SiC during turn ON can be a suitable TSEP.…”

Section: Introductionmentioning

confidence: 99%

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An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

Gonzalez

Alatise

et al. 2017

IEEE Trans. Power Electron.

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Section: Analytical Modelling Of the Gate And Drain Current Tempementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

Gonzalez

Alatise

et al. 2017

IEEE Trans. Power Electron.

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“…This is why the junction temperature is commonly measured using a thermo-sensitive electrical parameter (TSEP). Several TSEPs can be used for the chip temperature evaluation under operating conditions [6][7][8][9]. They will not be discussed in this paper.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of IGBT thermo-sensitive electrical parameters under different dissipation conditions – Comparison with infrared measurements

Avenas

Dupont²

2012

Microelectronics Reliability

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a b s t r a c tJunction temperature evaluation is a key parameter used to control a power module assembly. But measuring the junction temperature by thermo-sensitive electrical parameters (TSEPs) does not reveal the actual temperature of the semiconductor device. In this paper, a specific electronic board used to compare four common TSEPs of IGBT chips is presented. For this comparison, two dissipation modes are used: dissipation in active and saturation regions. In order to have referential measurements we carried out surface temperature measurements of IGBT chips with an infrared (IR) camera. A dedicated numerical tool is presented to estimate the mean surface temperature of active region. In the case of a single IGBT chip, the comparison between IR and TSEP measurements show that the best studied parameter (in terms of robustness and usability) is the gate emitter voltage.

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“…Since the gate resistance R G and supply voltage IGBT transfer characteristics at varying temperature. Dotted: experiment, solid: fitted curves using equation (15). V DC are fixed, the only dependencies that need to be tracked with converter operation are the junction temperature T j and collector current I C , equal to the load current I L until the end Here the values for α and a i were both 0.5.…”

Section: B Discussionmentioning

confidence: 99%

Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence

Bryant

Yang

Mawby

et al. 2011

IEEE Trans. Power Electron.

181

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Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. This article has been accepted for publication in a future issue of this journal, but has not been fully edited. Content may change prior to final publication. Abstract-In many power converter applications, particularly those with high variable loads such as traction and wind power, condition monitoring of the power semiconductor devices in the converter is considered desirable. Monitoring the device junction temperature in such converters is an essential part of this process. In this paper, a method for measuring the IGBT junction temperature using the collector voltage dV /dt at turn-off is outlined. A theoretical closed-form expression for the dV /dt at turn-off is derived, closely agreeing with experimental measurements. The role of dV /dt in dynamic avalanche in highvoltage IGBTs is also discussed. Finally, the implications of the temperature dependence of the dV /dt are discussed, including implementation of such a temperature measurement technique.

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Measurement of the transient junction temperature in MOSFET devices under operating conditions

Cited by 51 publications

References 4 publications

An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

Evaluation of IGBT thermo-sensitive electrical parameters under different dissipation conditions – Comparison with infrared measurements

Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence

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