Measurement of the Normalized Recombination Strength of Dislocations in Multicrystalline Silicon Solar Cells

Rinio, Markus; Peters, S.; Werner, Martina; Lawerenz, A.; Möller, Hans Joachim

doi:10.4028/www.scientific.net/ssp.82-84.701

Cited by 45 publications

(23 citation statements)

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“…Since multicrystalline silicon is cooled very slowly after crystallisation, it is not likely that much of the stored energy is due to point defects. In this case we are interested in the mechanisms involving dislocations, and the interesting effect in question is reducing the impact of dislocations on carrier recombination (Rinio et al 2002;Stokkan et al 2007), therefore also processes that do not directly influence the actual dislocation density, but only their configuration are of interest. …”

Section: Background Theorymentioning

confidence: 99%

High Temperature Annealing of Dislocations in Multicrystalline Silicon for Solar Cells

Stokkan¹,

Rosario²,

Berg³

et al. 2012

Solar Power

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Section: Background Theorymentioning

confidence: 99%

High Temperature Annealing of Dislocations in Multicrystalline Silicon for Solar Cells

Stokkan¹,

Rosario²,

Berg³

et al. 2012

Solar Power

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“…For example, dislocations can be formed via stress relaxation above the brittle-to-ductile transition temperature, reducing minority carrier lifetime. [115][116][117] Thermal gradients during crystal growth 23,[90][91][92] or cell processing 66,67 are well known to provoke dislocation formation, but similar pathways involving microdefect-related stresses have generally been underappreciated. We observe local stress along GBs ͑Fig.…”

Section: A Effect Of Stress On Manufacturing Yieldmentioning

confidence: 99%

Infrared birefringence imaging of residual stress and bulk defects in multicrystalline silicon

Ganapati

Schoenfelder

Castellanos

et al. 2010

2010 35th IEEE Photovoltaic Specialists Conference

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This manuscript concerns the application of infrared birefringence imaging ͑IBI͒ to quantify macroscopic and microscopic internal stresses in multicrystalline silicon ͑mc-Si͒ solar cell materials. We review progress to date, and advance four closely related topics. ͑1͒ We present a method to decouple macroscopic thermally-induced residual stresses and microscopic bulk defect related stresses. In contrast to previous reports, thermally-induced residual stresses in wafer-sized samples are generally found to be less than 5 MPa, while defect-related stresses can be several times larger. ͑2͒ We describe the unique IR birefringence signatures, including stress magnitudes and directions, of common microdefects in mc-Si solar cell materials including: ␤-SiC and ␤-Si 3 N 4 microdefects, twin bands, nontwin grain boundaries, and dislocation bands. In certain defects, local stresses up to 40 MPa can be present. ͑3͒ We relate observed stresses to other topics of interest in solar cell manufacturing, including transition metal precipitation, wafer mechanical strength, and minority carrier lifetime. ͑4͒ We discuss the potential of IBI as a quality-control technique in industrial solar cell manufacturing.

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“…grain boundaries (GBs), dislocations, and large incorporation of impurities [1e3]. These defects act as traps for the minority carriers, killing the minority carrier lifetime (t), and shortening the carrier diffusion length (L diff ), which negatively affects the energy conversion efficiency [2,3]. Some new approaches have appeared in recent years, trying to decrease the number of grains and GBs in mc-Si [4], in particular, the quasi-mono Si (qm-Si) growth, in which the use of c-Si as seeds in a conventional casting furnace leads to large mono-crystalline areas, is attracting a great deal of attention [5].…”

Section: Introductionmentioning

confidence: 99%

Defect recognition by means of light and electron probe techniques for the characterization of mc-Si wafers and solar cells

Moralejo

Tejero

Hortelano

et al. 2016

Superlattices and Microstructures

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a b s t r a c tMulticristalline Silicon (mc-Si) is the preferred material for current terrestrial photovoltaic applications. However, the high density of defects present in mc-Si deteriorates the material properties, in particular the minority carrier diffusion length. For this reason, a large effort to characterize the mc-Si material is demanded, aiming to visualize the defective areas and to quantify the type of defects, density and its origin. In this work, several complementary light and electron probe techniques are used for the analysis of both mc-Si wafers and solar cells. These techniques comprise both fast and whole-area detection techniques such as Photoluminescence imaging, and highly spatially resolved time consuming techniques, such as light and electron beam induced current techniques and mRaman spectroscopy. These techniques were applied to the characterization of different mc-Si wafers for solar cells, e.g. ribbon wafers, cast mc-Si as well as quasi-monocrystalline material, upgraded metallurgical mc-Si wafers, and finished solar cells.

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Measurement of the Normalized Recombination Strength of Dislocations in Multicrystalline Silicon Solar Cells

Cited by 45 publications

References 0 publications

High Temperature Annealing of Dislocations in Multicrystalline Silicon for Solar Cells

High Temperature Annealing of Dislocations in Multicrystalline Silicon for Solar Cells

Infrared birefringence imaging of residual stress and bulk defects in multicrystalline silicon

Defect recognition by means of light and electron probe techniques for the characterization of mc-Si wafers and solar cells

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