Measurement of the hot-electron conductivity in semiconductors using ultrafast electric pulses

Dobrovolskis, Z.; Grigoras, K.; Krotkus, A.

doi:10.1007/bf00619393

Cited by 32 publications

(16 citation statements)

References 10 publications

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“…The layer sequence is similar to that reported in reference [2] with the exception that the present layers did not incorporate delta-doping. Notintentionally-doped InAs/AlSb quantum wells are generally characterized by native electron concentrations of the order of -10" cm-2 associated with donors at the sample surface [7].…”

Section: Device Fabrication and Resultssupporting

confidence: 77%

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InAs/AlSb dual-gate HFETs

Bolognesi

Chow

1996

IEEE Electron Device Lett.

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We report the first implementation of InAs/AISb dual-gate (DG) HFET's. The devices were fabricated by conventional optical lithography and consist of two electrically distinct 1-pm gates, with a 1-pm intergate separation. The DG-HFET's feature well-behaved, kink-free drain characteristics, and exhibit both high transconductance and low output conductance. We find that DG operation significantly reduces the short-channel effects that have so far plagued InAs/AlSb devices, and increases the maximum allowable drain bias. We estimate that cutoff frequencies as high as 30 GHz-pm may be possible for such devices based on simple equivalent circuit models and previously published experimental data on single-gate InAs/AlSb HFET's.

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Section: Device Fabrication and Resultssupporting

confidence: 77%

“…pm may be possible for InAs/AlSb DG-HFET's in light of the best reported 46.5 GHz . pm f~ x L product for single-gate InAs/AlSb HFET's [2].…”

Section: Experimental Re~sults and Discussionmentioning

confidence: 99%

InAs/AlSb dual-gate HFETs

Bolognesi

Chow

1996

IEEE Electron Device Lett.

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“…With the smaller electron effective mass of InAs, higher electron mobilities are attained. Furthermore, due to the large -L valley separation, InAs has the advantage of a higher electron peak velocity compared to the other listed semiconductors [10]. Compared to In Ga As channel HEMT's, the considerably larger conduction band discontinuity (1.35 eV) of the AlSb/InAs heterojunction enables the formation of a deeper quantum well with the associated benefits of a larger 2-DEG sheet charge density, superior carrier confinement, and improved modulation efficiency.…”

Section: Materials Properties and Growthmentioning

confidence: 99%

AlSb/InAs HEMT's for low-voltage, high-speed applications

Boos

Kruppa

Bennett

et al. 1998

IEEE Trans. Electron Devices

127

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The design, fabrication, and characterization of 0.1 m AlSb/InAs HEMT's are reported. These devices have an In 0:4 Al 0:6 As/AlSb composite barrier above the InAs channel and a p + + + GaSb layer within the AlSb buffer layer. The HEMT's exhibit a transconductance of 600 mS/mm and an f f f T T T of 120 GHz at V V V DS DS DS = 0:6 V. An intrinsic f f f T T T of 160 GHz is obtained after the gate bonding pad capacitance is removed from an equivalent circuit. The present HEMT's have a noise figure of 1 dB with 14 dB associated gain at 4 GHz and V V V DS DS DS = 0:4 V. Noise equivalent circuit simulation indicates that this noise figure is primarily limited by gate leakage current and that a noise figure of 0.3 dB at 4 GHz is achievable with expected technological improvements. HEMT's with a 0.5 m gate length on the same wafer exhibit a transconductance of 1 S/mm and an intrinsic fT Lg fT Lg fT Lg product of 50 GHz-m.Index Terms-InAs, MODFET's, quantum wells, semiconductor device fabrication, semiconductor device noise. There he worked on a wide range of projects dealing with electronic materials modification and device fabrication and testing. In particular, he pioneered the use of ion implantation for III-V microwave device development. In 1981, he was made head of the Ion Implantation and Devices Section and in 1992, he became head of the High Frequency Devices and Materials Section. His research efforts have included MeV implantation for novel analog microwave devices, III-V MBE for microwave and millimeter-wave devices, quantum transport for electronic functions, wide band-gap materials and devices for high-temperature and high-power microwave devices, III-V MBE material for optical correlators, and a variety of related topics. He has co-authored more than 85 papers and holds eight patents. He has been extensively involved in the Navy's contractual efforts for electronic device research. Dr. Dietrich represented the Navy as a member of the tri-service team that supported DARPA in both the MIMIC and MAFET programs.

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“…Advantages of this material system include the high electron mobility ͑30 000 cm 2 /V s at 300 K͒ and velocity (4 ϫ10 7 cm/s) of InAs, 1 and a large conduction band offset between InAs and AlSb ͑1.35 eV͒. In order to achieve higher electron velocity ͑translating to higher frequency operation͒, In was added to the channel.…”

Section: Introductionmentioning

confidence: 99%

Materials growth for InAs high electron mobility transistors and circuits

Bennett

Tinkham

Boos

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inMolecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure J. Appl. Phys. 114, 013704 (2013); 10.1063/1.4811443 Molecular beam epitaxial growth of metamorphic AlInSb/GaInSb high-electron-mobility-transistor structures on GaAs substrates for low power and high frequency applications J. Appl. Phys. 109, 033706 (2011); 10.1063/1.3544041Suppression of surface segregation of silicon dopants during molecular beam epitaxy of ( 411 ) A In 0.75 Ga 0.25 As ∕ In 0.52 Al 0.48 As pseudomorphic high electron mobility transistor structures Study of highly selective wet gate recess process for Al 0.25 Ga 0.75 As/GaAs based pseudomorphic high electron mobility transistors Comparison of As-and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications High electron mobility transistors ͑HEMTs͒ with InAs channels and antimonide barriers were grown by molecular beam epitaxy. Both Si and Te were successfully employed as n-type dopants. Sheet resistances of 90-150 ⍀/ᮀ were routinely achieved on a variety of heterostructures with nonuniformities as low as 1.5% across a 75 mm wafer. X-ray diffraction measurements show that the InAs channels are in tension, coherently strained to the Al͑Ga͒Sb buffer layers. Atomic force microscopy measurements demonstrate that the surfaces are relatively smooth, with rms roughness of 8 -26 Å over a 5ϫ5 m 2 area. These results demonstrate that the growth of InAs HEMTs has progressed to the point that the fabrication of circuits should be feasible.

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Measurement of the hot-electron conductivity in semiconductors using ultrafast electric pulses

Cited by 32 publications

References 10 publications

InAs/AlSb dual-gate HFETs

InAs/AlSb dual-gate HFETs

AlSb/InAs HEMT's for low-voltage, high-speed applications

Materials growth for InAs high electron mobility transistors and circuits

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