Measurement of spatial variations of the carrier lifetime in silicon power devices

Zimmermann, Walter

doi:10.1002/pssa.2210120241

Cited by 36 publications

(4 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Hence, depending on the experimental conditions, the generated charge carriers can be extracted efficiently to the interface as soon as generated. In contrast, with backside illumination, the photogenerated charge carriers must diffuse through the bulk silicon to the depletion region − whereupon electron transfer can be achieved at the silicon/electrolyte interface. As this electron diffusion can also occur laterally, the region with photogenerated carriers broadens and hence spatial resolution is inferior and typically is similar to the thickness of the silicon. , …”

Section: Resultsmentioning

confidence: 99%

Light-Activated Electrochemistry for the Two-Dimensional Interrogation of Electroactive Regions on a Monolithic Surface with Dramatically Improved Spatial Resolution

et al. 2016

View full text Add to dashboard Cite

The concept of light-activated electrochemistry (LAE) was recently presented where faradaic electrochemistry could be spatially resolved on a monolithic silicon electrode by illuminating the specific region with light. A major implication from the previous study using illumination from the nonsolution side, or backside, is that the spatial resolution is limited by the finite thickness of silicon wafer. To overcome this restriction, and enable the further application of LAE, in combination with optical imaging for example, herein the spatial resolution of LAE using topside illumination (illumination from the solution side) is explored. The applied potential and irradiated light intensity are found to have significant effects on the spatial resolution. A spatial resolution of ∼30 μm was achieved with optimal parameters, which is a 20 times improvement compared with the previously reported backside illumination design, demonstrating the potential application of the strategy including microarray patterning of silicon or for single cell analysis.

show abstract

Section: Resultsmentioning

confidence: 99%

Light-Activated Electrochemistry for the Two-Dimensional Interrogation of Electroactive Regions on a Monolithic Surface with Dramatically Improved Spatial Resolution

et al. 2016

View full text Add to dashboard Cite

show abstract

“…The reason for this is that there is no range of in which the decays exponentially with . Zimmerman [9] suggested a method to overcome this problem. He pointed out that when the beam position is kept constant and after the beam is turned off, the collected current decreases as…”

Section: Introductionmentioning

confidence: 99%

Determination of diffusion length from within a confined region with the use of EBIC

Ong

2001

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

A new method of extracting minority carrier diffusion length from within a confined region of material is presented in this paper. This technique uses the finite difference method and can be used on samples where the diffusion lengths are longer than the width of the region. This cannot be achieved using the conventional method, which evaluates the negative reciprocal of the slope of the EBIC signals line scan plotted on a semi-logarithmic scale. A limitation of this method is that the beam entrance surface of the sample is assumed to have negligible surface recombination.

show abstract

“…Earlier studies of the distribution of resistivity over the cross-section of an ingot [4,5] show a considerable doping inhomogeneity of the monocrystal. Starting from entirely original measurements of the lifetime of minority charge carriers in high-resistivity p-type silicon, Zinimermann [6] pointed to the distribution inhoniogeneity not only of the doping material, but also of deep doping levels. There is no doubt that a complex study of electrophysical and structural characteristics is necessary to get a full idea of the properties of the material.…”

Section: Introductionmentioning

confidence: 99%

The behaviour of arsenic in silicon

Magden

Kal'nev

Kondrat'ev

et al. 1974

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

An investigation is made of the distribution of resistivity, lifetime of minority charge carriers, concentration and mobility of majority charge carriers, and mechanical stresses in the cross section (80 mm in diameter) of monocrystalline silicon doped with arsenic up to a concentration of 6 x 1014 ~m -~. Changing of the above parameters in the thermal treatment of the semiconductor a t temperatures from 900 to 1300 "C is considered and the inf hence of 0,, C, and Sic on the thermostability of Si is analysed. Es wird die Verteilung des Widerstands, der Lebensdauer der Minoritiitsladungstrager, der Konzentration und Beweglichkeit der Majoritatsladungstrager und der mechanischen Spannungen im Querschnitt (80 mm im Durchmesser) von Siliziumeinkristallen m.it Arsendotierung bis zu Konzentrationen von 6 x 1014 ern+ untersucht. Weiter wird die Anderung dieser Parameter bei der Temperung der Halbleiter bei Temperaturen von 900 bis 1300 O C nntersucht und der EinfluB von 0,, C und Sic auf die Thermostabilitat von Si analysiert.

show abstract

Measurement of spatial variations of the carrier lifetime in silicon power devices

Cited by 36 publications

References 14 publications

Light-Activated Electrochemistry for the Two-Dimensional Interrogation of Electroactive Regions on a Monolithic Surface with Dramatically Improved Spatial Resolution

Light-Activated Electrochemistry for the Two-Dimensional Interrogation of Electroactive Regions on a Monolithic Surface with Dramatically Improved Spatial Resolution

Determination of diffusion length from within a confined region with the use of EBIC

The behaviour of arsenic in silicon

Contact Info

Product

Resources

About