Measurement of Secondary Electron Emission Coefficient (γ) of MgO Protective Layer with Various Crystallinities

Abstract

The secondary electron emission coefficient γ of a MgO protective layer with various crystallinities has been successfully measured by the γ-focused ion beam system with complete elimination of the charge accumulation problem by scanning-area adjustment techniques. It is found that the (111) surface has the highest γ from 0.14 to 0.26 in comparison with the other films with (200) and (220) crystallinities for operating Ne+ ions, while ranged from 0.03 to 0.24 for Ar+ ions, under operating ion energies from 50 eV to 500 eV throughout this experiment. These observations explain why the (111) crystallinity of the MgO protective layer plays an important role in lowering the firing voltages in AC plasma display panel compared to the films with other crystallinities.

Band gap and defect states of MgO thin films investigated using reflection electron energy loss spectroscopy

“…[1][2][3][4] To display dynamic images using AC-PDPs, a firing voltage is applied to the electrodes to initiate discharge. Then, ultraviolet photons emitted from the plasma are absorbed in phosphors, and visible photons are generated.…”

“…5 Improving the performance of AC-PDPs and reducing the firing voltage of plasma (Vf) is essential, and can be achieved by using a protective layer with a higher ion-induced secondary electron (IISE) yield, γ. Therefore, γ is one of the most important parameters of the MgO protective layer for improving the discharge characteristics, 1,6 and the IISE phenomenon in MgO films has been intensively studied. [7][8][9][10][11][12][13][14][15] The magnitude of γ is strongly influenced by the MgO film electronic structure.…”

Fabrication techniques and material properties of dielectric MgO thin films—A status review

“…24). The experimental results showed that the surface composition and the surface morphology significantly influence the SEE coefficient [184,185]. Lee et al [102] found that the magnitude of the SEE yield of the MgO film strongly depends to the detailed mechanisms of electron supply, which is determined by the applied bias voltage to the sample.…”

Ion‐Conducting Probes for Low Temperature Plasmas

“…Beside these chemical reactions at the YSZ|plasma interface, emission effects can take place. According to the literature, the coefficient for secondary electron emission of an oxide can be higher than for the corresponding metal [14,15]. Furthermore, the field-assisted emission of O − ions from the surface of YSZ into vacuum has been reported in the literature, the details of the mechanism are subject to disussion [16].…”