Fabrication techniques and material properties of dielectric MgO thin films—A status review

Raj, A. Moses Ezhil; Jayachandran, M.; Sanjeeviraja, C.

doi:10.1016/j.cirpj.2010.02.003

Cited by 57 publications

(25 citation statements)

References 169 publications

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“…Using these values, the effective resistancearea product is RA(0) ≈ 0.14 Ω · µm 2 and the magnitude of the ac resistance is ∆R ≈ 21.7 kΩ. Finally, ε = 9.8 is a reasonable estimate for the relative permittivity of the MgO barrier 30 .…”

Section: B Electrical Parameters Of the Atjmentioning

confidence: 95%

“…The TAMR ratio η can be calculated for given ∆R as η = 2∆R/(R 0 − ∆R). The capacitance of an ATJ can be estimatd as the capacitance of a square parallel-plate capacitor with a plate size a = √ S and the distance d between the plates: C = εε 0 S/d (ε is the MgO relative permittivity 30 , and ε 0 is the vacuum permittivity). The inductance of an ATJ can be evaluated as L = µ 0 d, where µ 0 is the vacuum permeability.…”

Section: B Electrical Parameters Of the Atjmentioning

confidence: 99%

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Terahertz frequency spectrum analysis with a nanoscale antiferromagnetic tunnel junction

Artemchuk

Sulymenko

Louis

et al. 2020

Journal of Applied Physics

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A method to perform spectrum analysis on low power signals between 0.1 and 10 THz is proposed. It utilizes a nanoscale antiferromagnetic tunnel junction (ATJ) that produces an oscillating tunneling anisotropic magnetoresistance, whose frequency is dependent on the magnitude of an evanescent spin current. It is first shown that the ATJ oscillation frequency can be tuned linearly with time. Then, it is shown that the ATJ output is highly dependent on matching conditions that are highly dependent on the dimensions of the dielectric tunneling barrier. Spectrum analysis can be performed by using an appropriately designed ATJ, whose frequency is driven to increase linearly with time, a low pass filter, and a matched filter. This method of THz spectrum analysis, if realized in experiment, will allow miniaturized electronics to rapidly analyze low power signals with a simple algorithm. It is also found by simulation and analytical theory that for an ATJ with a 0.09 µm 2 footprint, spectrum analysis can be performed over a 0.25 THz bandwidth in just 25 ns on signals that are at the Johnson-Nyquist thermal noise floor.

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Section: B Electrical Parameters Of the Atjmentioning

confidence: 95%

Section: B Electrical Parameters Of the Atjmentioning

confidence: 99%

Terahertz frequency spectrum analysis with a nanoscale antiferromagnetic tunnel junction

Artemchuk

Sulymenko

Louis

et al. 2020

Journal of Applied Physics

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show abstract

“…Many researchers have used metal-organic chemical vapor deposition (MOCVD), (Fujita et al, 1999;Zeng et al, 1996;Sung et al, 2000) laser ablation , and electron beam evaporation (P. O'Connor Casey et al, 2009) to synthesize epitaxial MgO films. In addition, MgO films showing various orientations and morphologies have been deposited using various techniques (Raj et al, 2010).…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of Magnesia Films on Single Crystalline Magnesia Substrates by Atmospheric-Pressure Chemical Vapor Deposition

Komatsu¹,

Alonso²,

Kobayashi³

et al. 2016

JMSR

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MgO films were epitaxially grown on single crystal MgO substrates by atmospheric-pressure chemical vapor deposition (CVD). Reciprocal lattice mappings and X-ray reflection pole figures were used to evaluate the crystal quality of the synthesized films and their epitaxial relation to their respective substrates. The X-ray diffraction profiles indicated that the substrates were oriented out-of-plane during MgO crystal growth. Subsequent pole figure measurements showed how all the MgO films retained the substrate in-plane orientations by expressing the same pole arrangements. The reciprocal lattice mappings indicated that the whisker film showed a relatively strong streak while the continuous film showed a weak one. Hence, highly crystalline epitaxial MgO thin films were synthesized on single crystal MgO substrates by atmospheric-pressure CVD.

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“…Both single and multilayer MgO can be deposited using several methods such as pulsed laser deposition, electron beam evaporation, chemical vapor deposition and sol-gel spin coating technique [6], [11]. Compared to others, sol-gel offers several advantages, such as good film homogeneity, easy stoichiometry control, purity, ease of processing and controlling the composition, and the ability to coat at large and complex area substrates [12], [13].…”

Section: Introductionmentioning

confidence: 99%

Enhancement in Dielectric Constant and Structural Properties of Sol-Gel Derived MgO Thin Film using ZnO/MgO Multilayered Structure

Zulkefle¹,

Ismail²,

Bakar³

et al. 2012

IJAPM

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Abstract-High dielectric constant, low porosity and nano-dimension particle of single layer magnesium oxide, MgO and multilayer ZnO/MgO were synthesized at different MgO solution molar concentration by the simple chemical solution technique. The MgO molar concentration was found to alter the properties of both single and multilayer films. Observation reveals the surface morphology change form uniform to agglomerate and porous structure with corresponding increase in molar concentration. The increment in particle size and the formation of agglomerated particle were observed by FESEM (JEOL JSM-J600F). The best prepared dielectric film for both single and multilayer is the film that deposited using 0.4 molar concentration MgO solution due to its high dielectric constant, uniform film, and the particle is in nanometer dimension with nonorod like structure.

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Fabrication techniques and material properties of dielectric MgO thin films—A status review

Cited by 57 publications

References 169 publications

Terahertz frequency spectrum analysis with a nanoscale antiferromagnetic tunnel junction

Terahertz frequency spectrum analysis with a nanoscale antiferromagnetic tunnel junction

Epitaxial Growth of Magnesia Films on Single Crystalline Magnesia Substrates by Atmospheric-Pressure Chemical Vapor Deposition

Enhancement in Dielectric Constant and Structural Properties of Sol-Gel Derived MgO Thin Film using ZnO/MgO Multilayered Structure

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