2012
DOI: 10.7763/ijapm.2012.v2.50
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Enhancement in Dielectric Constant and Structural Properties of Sol-Gel Derived MgO Thin Film using ZnO/MgO Multilayered Structure

Abstract: Abstract-High dielectric constant, low porosity and nano-dimension particle of single layer magnesium oxide, MgO and multilayer ZnO/MgO were synthesized at different MgO solution molar concentration by the simple chemical solution technique. The MgO molar concentration was found to alter the properties of both single and multilayer films. Observation reveals the surface morphology change form uniform to agglomerate and porous structure with corresponding increase in molar concentration. The increment in partic… Show more

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Cited by 15 publications
(7 citation statements)
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“…ZnO, possessing high ¾ after specific structural engineering, could be used as dielectric layer in storage device fabrication such as in memory and micro-laser. 5 There are reports on ¾ studies in case of ZnO. 6 In case of doped compound, ¾ depends on the composition of the doping element.…”
mentioning
confidence: 99%
“…ZnO, possessing high ¾ after specific structural engineering, could be used as dielectric layer in storage device fabrication such as in memory and micro-laser. 5 There are reports on ¾ studies in case of ZnO. 6 In case of doped compound, ¾ depends on the composition of the doping element.…”
mentioning
confidence: 99%
“…EP / MWCNT were mixed with hardener for 5 min. The third procedure was by utilizing vacuum equipment (10 -3 bar) to vanished the bubble [9]. Four composites samples of EP pure and EP / MWCNTs composites with different mixing ratios were prepared for electrical properties is identical to the specification of ASTM (D150) as shown in the table (1):…”
Section: Methodsmentioning
confidence: 99%
“…e performance of a TFT is greatly influenced by the properties of its dielectric layer. e dielectric layer is responsible for the accumulation of charge in the channel and leakage current in the device [52,53]. ere is a fundamental limitation on the thickness of a silicon-based gate dielectric that the oxides having a thickness less than 2 nm suffer from direct tunnelling current or leakage current [54].…”
Section: Demand For High-k Materialsmentioning
confidence: 99%