Measurement of growth rate by thermal pulse technique and growth of homogeneous In Ga1−Sb bulk crystals

Numerical simulation of InGaSb crystals growth under microgravity onboard the international space station

“…These applications require high quality bulk homogeneous crystals of In x Ga 1-x Sb (uniform crystal compositions) because of its tunable lattice parameter and wavelength ranging from 6.09~6.48 Å and 1.7~6.8 m by adjusting its composition [1]. It is however difficult to grow such crystals on Earth (under the effect of its gravity) because of the following two thermosolutal effects: (1) First is the thermosolutal convection in the melt, driven by density differences, that gives rise to fluctuations in crystal composition in the grown crystal, and consequently lowers crystal quality [2,3]; and (2) Second is the large separation between the liquidus and solidus curves of the system's phase diagram that causes large compositional differences (segregation) between the grown crystal (solid) and the solution (liquid). However, under microgravity environment such as the ISS, such adverse thermosolutal effects can be minimized.…”

Numerical Simulation of the Dissolution Process of GaSb into InSb Melt under Normal and Microgravity Conditions

“…Thus, by adjusting its composition, the lattice constant can be varied between 6.09 Å and 6.48 Å, and correspondingly the wavelength can be controlled between 1.7 µm and 6.8 µm 1) . As the range of wavelength is mid-infrared, In x Ga 1-x Sb can be used for various industrial applications including gas sensors and optoelectronic devices.…”

“…The growth process of InGaSb crystals by the temperature gradient method begins after the dissolution process of GaSb into the solution, and the initiation of the growth process depends on the saturation condition of the solution. As the In composition of the grown crystal changes in the axial direction due to effect of gravity 1) , initial conditions of growth process, such as the position of GaSb crystal and the saturated state of solution, affect the crystal quality significantly. Thus, in this study, we have carried out numerical simulations for the dissolution process of GaSb into InSb melt under normal and microgravity conditions prior to the scheduled spaced experiments on the ISS.…”

Growth of homogeneous InGaSb ternary alloy semiconductors on InSb seed

“…We have been making preliminary experiments for future microgravity experiments in the International Space Station [15]. One of the purposes is to grow homogeneous In x Ga 1Àx Sb ternary bulk crystals of high quality under a constant temperature gradient using an InSb(seed)/ Te-doped InSb/GaSb(feed) sandwich structure.…”