Measurement and modeling of time- and spatial-resolved wafer surface temperature in inductively coupled plasmas

Hsu, Cheng–Che; Titus, M. J.; Graves, David B.

doi:10.1116/1.2731369

Cited by 19 publications

(13 citation statements)

References 20 publications

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“…In addition to the neutral gas temperature, the measured temperature responses to several heating mechanisms occurred at the surface, including ion bombardment, electron-ion recombination, oxidation, nitridation, etching, surface recombination of radicals, and surface quenching of excited-state species [25,26]. Since the measurements are made at the jet downstream, the ion bombardment is not important.…”

Section: Jet Temperaturementioning

confidence: 99%

“…The time required for the thermocouple to reach T high is a function of the heat capacity, thermal conductivity, density, and size of the thermocouple and the alumina tube [27]. When the surface exposes to a heat reservoir with a constant inward heat flux, the temperature increases monotonically with time [25,26]. The temperature does not reach the steadystate until it is high enough so that the heat loss rate equals the heat flux into the surface.…”

Section: Jet Temperaturementioning

confidence: 99%

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Downstream Characterization of an Atmospheric Pressure Pulsed Arc Jet

Hsu

Yang

et al. 2010

Plasma Chem Plasma Process

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An atmospheric pressure nitrogen plasma jet sustained by a repetitive pulsed DC power source is studied. The afterglow characteristics of this plasma jet are studied by an optical emission spectrometer and thermocouples. The effects of the process parameters, namely the applied voltage and the gas flow rate, on the plasma characteristics are investigated. It is shown that the plasma reactivity is controlled by the power deposition to the plasma as well as the decay process of the reactive species upon formation. The reactivity increases with the increase in the applied voltage and with the decrease in the gas flow rate. The jet temperature is primarily controlled by the power density, and it increases with the increase in the applied voltage and with the decrease in the gas flow rate. These observations suggest that the plasma reactivity and the jet temperature of this plasma jet can be nearly independently controlled.

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Section: Jet Temperaturementioning

confidence: 99%

Section: Jet Temperaturementioning

confidence: 99%

Downstream Characterization of an Atmospheric Pressure Pulsed Arc Jet

Hsu

Yang

et al. 2010

Plasma Chem Plasma Process

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“…34 Here, E r as the thermal energy generated by the recombination between Ar þ and electron is considered to be the same as the ionization energy of Ar, which is 15.8 eV. 34 Therefore we think that the total energy deposited to FLG by ICP, U, can be accumulated in the FLG and released after it reaches the energy capacity of FLG.…”

Section: Articlementioning

confidence: 99%

Si-Compatible Cleaning Process for Graphene Using Low-Density Inductively Coupled Plasma

et al. 2012

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We report a novel cleaning technique for few-layer graphene (FLG) by using inductively coupled plasma (ICP) of Ar with an extremely low plasma density of 3.5 × 10(8) cm(-3). It is known that conventional capacitively coupled plasma (CCP) treatments destroy the planar symmetry of FLG, giving rise to the generation of defects. However, ICP treatment with extremely low plasma density is able to remove polymer resist residues from FLG within 3 min at a room temperature of 300 K while retaining the carbon sp(2)-bonding of FLG. It is found that the carrier mobility and charge neutrality point of FLG are restored to their pristine defect-free state after the ICP treatment. Considering the application of graphene to silicon-based electronic devices, such a cleaning method can replace thermal vacuum annealing, electrical current annealing, and wet-chemical treatment due to its advantages of being a low-temperature, large-area, high-throughput, and Si-compatible process.

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“…Sensors fabricated directly on silicon wafers allow semiconductor wafer-processing tools to handle diagnostic systems as if they were production wafers [2]. Instruments integrated onto wafers include temperature and film-thickness sensors, heat-flux probes [3], [4], impedancetomography probes [5], ion-flux sensors for 2-D flux characterization, and other sensors [6]- [8]. However, these process tools were designed for chamber or wafer-scale measurements.…”

Section: B Backgroundmentioning

confidence: 99%