The sensitive response of the nematic graphene oxide (GO) phase to external stimuli makes this phase attractive for extending the applicability of GO and reduced GO to solution processes and electro-optic devices. However, contrary to expectations, the alignment of nematic GO has been difficult to control through the application of electric fields or surface treatments. Here, we show that when interflake interactions are sufficiently weak, both the degree of microscopic ordering and the direction of macroscopic alignment of GO liquid crystals (LCs) can be readily controlled by applying low electric fields. We also show that the large polarizability anisotropy of GO and Onsager excluded-volume effect cooperatively give rise to Kerr coefficients that are about three orders of magnitude larger than the maximum value obtained so far in molecular LCs. The extremely large Kerr coefficient allowed us to fabricate electro-optic devices with macroscopic electrodes, as well as well-aligned, defect-free GO over wide areas.

We report a novel cleaning technique for few-layer graphene (FLG) by using inductively coupled plasma (ICP) of Ar with an extremely low plasma density of 3.5 × 10(8) cm(-3). It is known that conventional capacitively coupled plasma (CCP) treatments destroy the planar symmetry of FLG, giving rise to the generation of defects. However, ICP treatment with extremely low plasma density is able to remove polymer resist residues from FLG within 3 min at a room temperature of 300 K while retaining the carbon sp(2)-bonding of FLG. It is found that the carrier mobility and charge neutrality point of FLG are restored to their pristine defect-free state after the ICP treatment. Considering the application of graphene to silicon-based electronic devices, such a cleaning method can replace thermal vacuum annealing, electrical current annealing, and wet-chemical treatment due to its advantages of being a low-temperature, large-area, high-throughput, and Si-compatible process.

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In order to use graphene oxide (GO) dispersions for electro-optical applications, both a high GO concentration and a high electrical sensitivity are essential; however, these have not been achieved to date. Here, we report that by optimizing the mean size of GO particles to approximately 0.5 μm, one can obtain a high GO concentration of up to 2 wt% and high electrical sensitivity simultaneously. By reducing the mean GO-particle size, the interparticle interaction and the rotational viscosity can be significantly reduced, and a high-concentration isotropic phase can be obtained. As a result, the maximum birefringence increases and the dynamic response becomes faster. However, further decrease of the mean size below 0.1 μm causes a decrease in the anisotropy of electrical polarizability, resulting in the reduction of the electrical sensitivity of GO dispersions.