Measurement and Control of the Boron and Phosphorus Concentration in LPCVD Borophosphosilicate Glass

Zeitzoff, P.; Hossain, T.Z.; Boisvert, D.M.; Downing, R. G.

doi:10.1149/1.2086327

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ChemInform Abstract: Measurement and Control of the Boron and Phosphorus Concentration in LPCVD Borophosphosilicate Glass

et al. 1991

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Measurement and Control of the Boron and Phosphorus Concentration in LPCVD Borophosphosilicate Glass-(BPSG). -BPSG glass films of thicknesses in the range of 4000-5000 . ANG. are deposited by a LPCVD process using SiH4 and O2 as the main reactant gases and BCl3 and PH3 as dopant gases. The dopant gas flow rates are systematically varied and the absolute B and P concentration in the films are measured with high accuracy by unique nuclear analysis techniques utilizing neutron beams. The relationship between the concentrations and flow rates of the dopant gases during deposition is accurately fitted with a second-order polynomial, a type of fitting which is useful for practical applications. -(ZEITZOFF, P. M.; HOSSAIN, T. Z.; BOISVERT, D. M.; DOWNING, R. G.; J. Electrochem.

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