MCM-D/L Technology for Realization of Low Cost System-on-Package Concept at 60-80 GHz

Grzyb, Janusz; Klemm, M.; Tröster, Gerhard

doi:10.1109/euma.2003.341123

Cited by 7 publications

(4 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For high-frequency applications, the BCB film has to be thick enough to reduce the capacitive coupling between two layers. Thicker BCB film leads to lower signal loss [17,18]. Thus, thick BCB film and high aspect ratio via (HARVI) are desired.…”

Section: Introductionmentioning

confidence: 99%

A wafer-scale packaging structure with monolithic microwave integrated circuits and passives embedded in a silicon substrate for multichip modules for radio frequency applications

Geng

Ding

et al. 2009

J. Micromech. Microeng.

View full text Add to dashboard Cite

A wafer-level packaging structure with chips and passive components embedded in a silicon substrate for multichip modules (MCM) is proposed for radio frequency (RF) applications. The packaging structure consists of two layers of benzocyclobutene (BCB) films and three layers of metalized films, in which the monolithic microwave ICs (MMICs), thin film resistors, striplines and microstrip lines are integrated. The low resistivity silicon wafer with etched cavities is used as a substrate. The BCB films serve as interlayer dielectrics (ILDs). Wirebonding gold bumps are used as electric interconnections between different layers, which eliminate the need of preparing vias by costly procedures including dry etching, metal sputtering and electroplating. The chemical mechanical planarization (CMP) is used to uncover the gold bumps, and the BCB curing profile is optimized to obtain the appropriate BCB film for CMP process. In this work, the thermal, mechanical, electrical as well as RF properties of the packaging structure are investigated. The packaging thermal resistance can be controlled below 2 • C W −1 . The average shear strength of the gold bumps on the BCB surface is about 70 MPa. In addition, a Kelvin test structure is fabricated for resistance testing of the vertical vias. The performances of MMIC and interconnection structure at high frequency are simulated and tested. The testing results reveal that the slight shifting of S-parameter curves of the packaged MMIC indicates perfect transmission characteristics at high frequency. For the transition structure of transmission line, the experimental results are compatible with the simulation results. The insertion loss (S 21 ) is below 0.4 dB from 0 to 40 GHz and the return loss (S 11 ) is less than −20 dB from 0 to 40 GHz. For a low noise amplifier (LNA) chip, the S 21 shifting caused by the packaging structure is below 0.5 dB, and S 11 is less than −10 dB from 8 GHz to 14 GHz.

show abstract

Section: Introductionmentioning

confidence: 99%

A wafer-scale packaging structure with monolithic microwave integrated circuits and passives embedded in a silicon substrate for multichip modules for radio frequency applications

Geng

Ding

et al. 2009

J. Micromech. Microeng.

View full text Add to dashboard Cite

show abstract

“…The use of a laminated polymer and collective process including via hole drilling by laser, metallization, and photolithography will enable interconnection between filter excitation and bumps [11]. This allows pad redistribution (compatibility of bump size and pitch with PCB printing accuracy) and improved thermomechanical behavior with an additional layer between silicon and PCB (Roger-RO 4003).…”

Section: Interconnection Silicon Module-pcbmentioning

confidence: 99%

Innovative technologies for quasiplanar millimeter wave filtering applications

Ferrand¹,

Baillargeat²,

Verdeyme³

2007

Int J RF and Microwave Comp Aid Eng

View full text Add to dashboard Cite

In the context of millimeter filtering, the improvement of circuit electric properties (insertion losses, insulation, and rejection) and the reduction of the manufacturing costs are fundamental stakes. To answer these criteria, we attend since 10 years a constant evolution of the research tasks concerning the application of the periodic structures to the fields of high frequency communications. Circuits being based on the very particular properties of this type of material are increasingly effective. Two technologies are tested, Silicon micromachining and LTCC.

show abstract

“…The 18-dB required directivity at each path can be achieved with 16 elements providing 12 dB of array directivity combined with a typical directivity of a patch or dipole antenna ( 5 dB). Since there is no need to scan in the elevation plane, the required directivity in the elevation can be realized by narrowing the antenna beam in the elevation plane (e.g., using serially fed patches [17]- [19]). In this case, just four elements for beam steering in the azimuthal plane will be enough.…”

Section: The Required Amplifier Power For Automotive Radar Applicmentioning

confidence: 99%

A Wideband 77-GHz, 17.5-dBm Fully Integrated Power Amplifier in Silicon

Komijani

Hajimiri

2006

IEEE J. Solid-State Circuits

110

View full text Add to dashboard Cite

Abstract-A 77-GHz, +17.5 dBm power amplifier (PA) with fully integrated 50-input and output matching and fabricated in a 0.12-m SiGe BiCMOS process is presented. The PA achieves a peak power gain of 17 dB and a maximum single-ended output power of 17.5 dBm with 12.8% of power-added efficiency (PAE). It has a 3-dB bandwidth of 15 GHz and draws 165 mA from a 1.8-V supply. Conductor-backed coplanar waveguide (CBCPW) is used as the transmission line structure resulting in large isolation between adjacent lines, enabling integration of the PA in an area of 0.6 mm 2 . By using a separate image-rejection filter incorporated before the PA, the rejection at IF frequency of 25 GHz is improved by 35 dB, helping to keep the PA design wideband.

show abstract

MCM-D/L Technology for Realization of Low Cost System-on-Package Concept at 60-80 GHz

Cited by 7 publications

References 4 publications

A wafer-scale packaging structure with monolithic microwave integrated circuits and passives embedded in a silicon substrate for multichip modules for radio frequency applications

A wafer-scale packaging structure with monolithic microwave integrated circuits and passives embedded in a silicon substrate for multichip modules for radio frequency applications

Innovative technologies for quasiplanar millimeter wave filtering applications

A Wideband 77-GHz, 17.5-dBm Fully Integrated Power Amplifier in Silicon

Contact Info

Product

Resources

About