MBE growth of GaP on a Si substrate

Sobolev, M. S.; Лазаренко, А. А.; Nikitina, E. V.; Pirogov, E. V.; Gudovskikh, A. S.; Egorov, A. Yu.

doi:10.1134/s1063782615040235

Cited by 21 publications

(7 citation statements)

References 8 publications

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“…In the above studies, GaP-on-Si epitaxial layers were grown by metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). However, despite the outlined successes in the integration of III-V compounds with Si technology and the emergence of instrumental applications, heteroepitaxy of III-V semiconductors on Si still remains a difficult problem [17].…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x $(0 \leq x \leq 1)$

Saidov

Saparov

Usmonov

et al. 2021

Advances in Condensed Matter Physics

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Epitaxial layers of the solid solution of molecular substitution (Si2)1-x(GaP)x (0 ≤ x ≤ 1) on Si (111) and GaP (111) substrates are grown by liquid-phase epitaxy from an Sn solution-melt. Such graded-gap solid solutions allow the integration of well-established silicon technology with the advantages of III-V semiconductor compounds. The structural features, the distribution of the atoms of the components over the thickness of the epitaxial layer, the photoluminescence spectrum of the (Si2)1-x(GaP)x (0 ≤ x ≤ 1) solid solution, and the electroluminescence of the structure n-GaP-n+-(Si2)x (GaP)1-x (0 ≤ x ≤ 0.01) have been investigated. It is shown that the layers of the solid solution have a perfect single-crystal structure with the crystallographic orientation (111), with the size of subcrystallites ∼ 39 ± 1 nm. The epitaxial layer (Si2)1-x(GaP)x (0 ≤ x ≤ 1) is a graded-gap layer with a smoothly and monotonically varying composition from silicon to 100% GaP. The energy levels of atoms of Si2 molecules which are located 1.47 eV below the bottom of the conduction band of gallium phosphide are revealed. Red emission of n-GaP-n+-(Si2)x(GaP)1-x (0 ≤ x ≤ 0.01) structure which is caused by electron transitions with participation of energy levels of Si2 atoms is detected.

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Section: Introductionmentioning

confidence: 99%

Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x $(0 \leq x \leq 1)$

Saidov

Saparov

Usmonov

et al. 2021

Advances in Condensed Matter Physics

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“…The integration of GaP with Si solar cells provides a route to increased efficiency by serving as a buffer for the integration of III‐V solar cells or as a component of a carrier selective contact . For example, GaP has served as the buffer layer in III‐V solar cells for Si‐based tandems, which use direct heteroepitaxial growth of III‐V films on Si substrates . In addition, selective carrier approaches with GaP can allow high efficiency by reducing the absorption in comparison with amorphous Si (a‐Si) and ITO layers .…”

Section: Introductionmentioning

confidence: 99%

“…4 For example, GaP has served as the buffer layer in III-V solar cells for Si-based tandems, which use direct heteroepitaxial growth of III-V films on Si substrates. 5,6 In addition, selective carrier approaches with GaP can allow high efficiency by reducing the absorption in comparison with amorphous Si (a-Si) and ITO layers. 7,8 Moreover, the use of GaP as a selective contact in replacing a-Si allows selective contact structures to be applied to Si-based tandems.…”

Section: Introductionmentioning

confidence: 99%

Electronic structure of GaP/Si(001) heterojunctions and the role of hydrogen passivation

Meidanshahi¹,

Zhang²,

Zou³

et al. 2019

Progress in Photovoltaics

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Epitaxially grown single crystal GaP on Si is of considerable interest due to being nearly lattice matched to Si, making it attractive for III‐V/Si solar cells. GaP has been used as a buffer layer for III‐V/Si solar cells and also in selective contact Si solar cells. The performance and functionality of such devices are strongly influenced by the presence of localized states at the GaP/Si interface. Here, we examine the electronic structure of GaP/Si(001) heterojunctions and the effect of hydrogen (H) passivation at the interface, in contrast to interface mixing, through density functional theory calculations. Our calculations show that due to the heterovalent mismatch nature of the GaP/Si interface, there is a high density of localized states at the abrupt GaP/Si interface due to the excess charge associated with heterovalent bonding, as reported elsewhere. We find that the addition of H leads to additional bonding at the interface, which mitigates the charge imbalance, and greatly reduces the density of localized states, leading to a nearly ideal heterojunction. A similar result is found with a completely intermixed interface (alternating cation and anion bonding) in terms of low interface state density. However, when the intermixing occurs through single‐layer or double‐layer terraces, the benefits of intermixing are lost and the interface state density reverts more to the abrupt interface case.

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“…4 However, GaP layers are commonly grown by epitaxial techniques such as molecular beam epitaxy (MBE) 5,6 and metal organic vapor-phase epitaxy (MOVPE), [7][8][9] which require relatively high temperatures (500-800 C). Until now, the photovoltaic performance of GaP/Si heterojunctions obtained by epitaxy 4,10,11 is far from that of high efficiency Si solar cells. The main problem, especially for structures with anisotype heterojunctions (n-GaP/p-Si), can be related to the high growth temperature, which affects the GaP/Si interface quality.…”

Section: Introductionmentioning

confidence: 99%

Low temperature plasma enhanced deposition of GaP films on Si substrate

Gudovskikh

Морозов

Uvarov

et al. 2017

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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MBE growth of GaP on a Si substrate

Cited by 21 publications

References 8 publications

Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x $(0 \leq x \leq 1)$

Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x $(0 \leq x \leq 1)$

Electronic structure of GaP/Si(001) heterojunctions and the role of hydrogen passivation

Low temperature plasma enhanced deposition of GaP films on Si substrate

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MBE growth of GaP on a Si substrate

Cited by 21 publications

References 8 publications

Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x 0 ≤ x ≤ 1

Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x 0 ≤ x ≤ 1

Electronic structure of GaP/Si(001) heterojunctions and the role of hydrogen passivation

Low temperature plasma enhanced deposition of GaP films on Si substrate

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Product

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Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x $(0 \leq x \leq 1)$

Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x $(0 \leq x \leq 1)$