Low temperature plasma enhanced deposition of GaP films on Si substrate

Gudovskikh, A. S.; Морозов, И. А.; Uvarov, A. V.; Kudryashov, D. A.; Nikitina, E. V.; Bukatin, Anton; Неведомский, В. Н.; Kleider, Jean‐Paul

doi:10.1116/1.4999409

Cited by 22 publications

(19 citation statements)

References 18 publications

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“…For the III‐V the direct growth by molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD) on silicon faces for the moment problems related to the lattice mismatch which generates defects. We can therefore look at the side of transfer techniques such as lift‐off and wafer bonding, or consider new low temperature growth methods such as plasma‐enhanced atomic layer deposition (PE‐ALD) . Another possibility is the combination with perovskites, and the interface compatibility work has to be carried out.…”

Section: Discussionmentioning

confidence: 99%

Bandgap engineered smart three‐terminal solar cell: New perspectives towards very high efficiencies in the silicon world

Djebbour

El-Huni

Dubois

et al. 2019

Progress in Photovoltaics

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We present the design of a new architecture of three-terminal (3-T) photovoltaic tandem solar cells. It combines an interdigitated back contacted (IBC) bottom lateral subcell with a heterojunction vertical top cell. In this concept, the two subcells can work independently and there is no need for tunnel junctions. It is particularly well suited to silicon back contact subcells and to various types of top cell materials from III-V compounds or perovskites. The working principle is detailed here using as an example a p/i III-V front stack onto n-type silicon IBC bottom cell. We perform two-dimensional (2D) modeling using realistic material input parameters and show how interface bandgap engineering can improve the tandem cell efficiency up to a reachable 35% value. The proposed cell concept named bandgap engineered smart silicon three-terminal (BESTT) cell can be realized with less technological steps and at a lower cost compared with the conventional four-terminal process.

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Section: Discussionmentioning

confidence: 99%

Bandgap engineered smart three‐terminal solar cell: New perspectives towards very high efficiencies in the silicon world

Djebbour

El-Huni

Dubois

et al. 2019

Progress in Photovoltaics

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“…The first process was performed with continuous H 2 plasma discharge during the deposition and purge cycles. A pulsed RF power increase to 200 W (corresponding to a power density of 0.28 W cm −2 ) during both Ga and P deposition steps was used to provide better structural properties of GaP films as described in Gudovskikh et al For the second process, a high‐power RF plasma of 200 W was used during the P deposition step only for PH 3 decomposition, whereas Ga deposition occurred due to thermal decomposition of TMG. Those two processes will be referred to as “H‐plasma” and “no‐plasma” modes.…”

Section: Growth Details and Structural Propertiesmentioning

confidence: 99%

Study of GaP Nucleation Layers Grown on Si by Plasma‐Enhanced Atomic Layer Deposition

Gudovskikh

Uvarov

Морозов

et al. 2019

Physica Status Solidi (a)

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The capability of plasma‐enhanced atomic layer deposition (PE‐ALD) for the formation of GaP nucleation layers on Si substrates for further epitaxial growth is explored. The possibility of epitaxial growth of GaP by metalorganic vapor phase epitaxy (MOVPE) on templates prepared by PE‐ALD GaP/Si is demonstrated. The structural and electronic properties of the interfaces between the GaP nucleation layer and the Si substrate as well as their thermal stability are studied. Initially, the GaP/Si structures obtained by PE‐ALD without additional hydrogen plasma exhibit better photoelectric properties compared with that fabricated with high H2 plasma power that induces the formation of defects in the silicon subsurface layer. Annealing at temperatures of 550–600 °C leads to a decrease in the defect concentration created by the hydrogen plasma. Thus, after annealing, the GaP/Si interfaces fabricated by both types of PE‐ALD processes exhibit similar quality. Thermal treatment of the GaP/Si structures at temperatures of 725–750 °C leads to the diffusion of phosphorus from GaP into Si and to the formation of an isotype n‐GaP/n–p‐Si heterojunction with improved photoelectric properties. High‐temperature stability of the GaP/Si interface fabricated by PE‐ALD is essential for its prospective use for GaP/Si templates.

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“…В случае использования процесса с постоянным горением водородной плазмы водород стравливает избыточный фосфор со стенок камеры и на этапе осаждения галлия в газовой среде присутствуют одновременно атомы фосфора и галлия, что приводит к неконтролируемому росту GaP в режиме, сильно отличающемся от атомно-слоевого. Чтобы избежать этого негативного эффекта, было предложено использовать шаг с обработкой в водородной плазме с повышенной мощностью непосредственно после осаждения фосфора [20]. Данный режим позволил достичь атомно-слоевого роста с очень высокой степенью однородности по толщине (разброс по толщине < 5% на площади подложки диаметром 76 мм).…”

Section: экспериментальная частьunclassified

“…Высокая однородность толщины и высокая степень покрытия развитых поверхностей достигаются поочередным напуском в камеру каждого из прекурсоров. Ранее была показана возможность выращивания с помощью АСПХО как аморфных, так и тонких эпитаксиальных слоев GaP на поверхности подложек Si [20,21]. Данный факт создает предпосылки для успешного использования слоев GaP, полученных этим методом при низких температурах, в качестве нуклеационного слоя для последующего эпитаксиального роста соединений A III B V .…”

Section: Introductionunclassified

Исследование влияния термического отжига на фотоэлектрические свойства гетероструктур GaP/Si, полученных методом атомно-слоевого плазмохимического осаждения

Uvarov¹,

Zelentsov²,

Gudovskikh³

2019

Физика И Техника Полупроводников

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The effect of thermal annealing on the photovoltaic properties of a GaP/Si heterostructures obtained by plasma-enhanced atomic layer deposition under different conditions is examined. It is shown that in the structures containing amorphous GaP, annealing at 550°C leads to a sharp decrease in the quantum efficiency and open-circuit voltage, while in the structures with microcrystalline GaP on an epitaxial sublayer, the photovoltaic characteristics are improved. Annealing at a temperature of 750°C improves the photovoltaic characteristics in all the structures due to the diffusion of phosphorus atoms from GaP to Si and leads to the formation of a layer with n -type conductivity in the substrate. As the annealing temperature is increased to 900°C, the carrier lifetime in the silicon substrate decreases. It is shown that the atomic-layer-deposition technique is promising for the formation of a GaP nucleation layer on the surface of silicon before subsequent epitaxial growth.

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Low temperature plasma enhanced deposition of GaP films on Si substrate

Cited by 22 publications

References 18 publications

Bandgap engineered smart three‐terminal solar cell: New perspectives towards very high efficiencies in the silicon world

Bandgap engineered smart three‐terminal solar cell: New perspectives towards very high efficiencies in the silicon world

Study of GaP Nucleation Layers Grown on Si by Plasma‐Enhanced Atomic Layer Deposition

Исследование влияния термического отжига на фотоэлектрические свойства гетероструктур GaP/Si, полученных методом атомно-слоевого плазмохимического осаждения

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