In the present work we report on the optimization of MBE growth conditions
and design of metamorphic In(Al)(Ga)As/GaAs heterostructures. This results
in a strong decrease in the density of threading dislocations in the upper
(active) layers and the improvement of surface morphology. Room-temperature
mobility in metamorphic modulation-doped InGaAs/InAlAs heterostructures was
8100 cm2 V−1 s−1, which is comparable to that of InP-based structures and noticeably superior to
pseudomorphic GaAs-based structures.
InAs quantum dots formed in a metamorphic InGaAs matrix on a GaAs substrate
were used for lasers with promising characteristics (emitting wavelengths of
1.46 µm, with threshold
current densities of 1.4 kA cm−2).
We report direct experimental evidence of the collective super-radiant mode in Bragg structure containing 60 InAs monolayer-based quantum wells (QWs) periodically arranged in GaAs matrix. Time-resolved photoluminescence measurements reveal an appearance of the additional super-radiant mode, originated from coherent collective interaction of QWs. This mode demonstrates a super-linear dependence of the intensity and radiative decay rate on the excitation power. The super-radiant mode is not manifested in the case if only a small number of QWs is excited.
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