Maximum Peak Current and Junction-to-ambient Delta-temperature Investigation in GaN FETs Parallel Connection

Barba, Vincenzo; Musumeci, Salvatore; Palma, Marco; Bojoi, Radu

doi:10.1016/j.pedc.2023.100035

Cited by 2 publications

(2 citation statements)

References 5 publications

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“…Meanwhile, the applications of lateral e-mode GaN FET devices are still under study, and the development of specific power converters is required. For example, Si MOSFETs have been investigated extensively in a parallel connection to obtain a fast and high current switch, while the behavior of GaN FETs is under study to optimize the parallel assembly [61,62]. Furthermore, another important limit for market penetration in consumer power electronics is the high cost.…”

Section: Discussionmentioning

confidence: 99%

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

Musumeci

Barba

2023

Energies

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High-electron-mobility transistors based on gallium nitride technology are the most recently developed power electronics devices involved in power electronics applications. This article critically overviews the advantages and drawbacks of these enhanced, wide-bandgap devices compared with the silicon and silicon carbide MOSFETs used in power converters. High-voltage and low-voltage device applications are discussed to indicate the most suitable area of use for these innovative power switches and to provide perspective for the future. A general survey on the applications of gallium nitride technology in DC-DC and DC-AC converters is carried out, considering the improvements and the issues expected for the higher switching transient speed achievable.

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Section: Discussionmentioning

confidence: 99%

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

Musumeci

Barba

2023

Energies

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“…The increasing requirements for semiconductor power devices include high-voltage endurance, short switching times, and operation with higher power values and at higher temperatures [7][8][9][10][11][12][13]. For several decades, the attention of semiconductor power device technologists and designers has been focused on materials with high energy gap values, such as silicon carbide or gallium nitride.…”

Section: Introductionmentioning

confidence: 99%

The Modeling of GaN-FET Power Devices in SPICE

Zarębski,

Bisewski

2023

Energies

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This paper focuses on the problem of the modeling of FET power transistors made of gallium nitride offered by GaN Systems, Transphorm, and Nexperia. The considered devices have been available on the market since 2014. GaN-FETs are built as a cascade connection of a normally on gallium nitride HEMT and a normally off MOSFET made of silicon. On the manufacturer’s sites, one can find models of these devices for like-SPICE tools in the text form. The main goal of this paper is to evaluate the model’s accuracy by comparing calculation results obtained by the use of the considered models with the authors’ measurement results and datasheet. It has been demonstrated that the GaN Systems model built on controlled sources described by a set of arbitrarily selected mathematical functions more accurately reproduces the basic characteristics of a transistor. On the other hand, the models from Transphorm and Nexperia, which are constructed based on built-in semiconductor device models, more precisely calculate the values of selected functional transistor parameters.

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Maximum Peak Current and Junction-to-ambient Delta-temperature Investigation in GaN FETs Parallel Connection

Cited by 2 publications

References 5 publications

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

The Modeling of GaN-FET Power Devices in SPICE

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