2023
DOI: 10.3390/en16227643
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The Modeling of GaN-FET Power Devices in SPICE

Janusz Zarębski,
Damian Bisewski

Abstract: This paper focuses on the problem of the modeling of FET power transistors made of gallium nitride offered by GaN Systems, Transphorm, and Nexperia. The considered devices have been available on the market since 2014. GaN-FETs are built as a cascade connection of a normally on gallium nitride HEMT and a normally off MOSFET made of silicon. On the manufacturer’s sites, one can find models of these devices for like-SPICE tools in the text form. The main goal of this paper is to evaluate the model’s accuracy by c… Show more

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Cited by 3 publications
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