Influence of Parasitic Capacitances and Inductances in a Power Electronic Converter on Junction Temperature of Power GaN HEMTs

Górecki, Pawel; Ahmed, Dennis

doi:10.23919/mixdes62605.2024.10613973

2024 31st International Conference on Mixed Design of Integrated Circuits and System (MIXDES) 2024

DOI: 10.23919/mixdes62605.2024.10613973

|View full text |Cite

Influence of Parasitic Capacitances and Inductances in a Power Electronic Converter on Junction Temperature of Power GaN HEMTs

Pawel Górecki,

Dennis Ahmed

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

A Critical Analysis and Comparison of the Effect of Source Inductance on 3- and 4-Lead SuperJunction MOSFETs Turn-Off

Rizzo,

Salerno,

Ventura

et al. 2024

Electronics

View full text Add to dashboard Cite

This paper critically compares the turn-off performance of two package solutions, 3-lead (3L) vs. 4-lead (4L), in SuperJunction MOSFETs. It is commonly assumed that the better performance (lower switching losses) of the 4L MOSFET is obtained thanks to the decoupling of the power and driving loops. On the contrary, in this work, the experimental results, circuit models and Kirchhoff laws show that the turn-off improvement (lower turn-off losses) obtained by adopting the Kelvin source is due to the lower inductance of the driver loop of the 4L MOSFET, instead of the decoupling between the driver and power loops. In detail, an inductor is added to the gate path of the 4L MOSFET to obtain a total inductance in the driver loop equal to the 3L counterpart. The experimental results show that the 4L MOSFET presents the same drain current slew rate under this condition, although the driver and power loops are still decoupled.

show abstract

A Critical Analysis and Comparison of the Effect of Source Inductance on 3- and 4-Lead SuperJunction MOSFETs Turn-Off

Rizzo,

Salerno,

Ventura

et al. 2024

Electronics

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Influence of Parasitic Capacitances and Inductances in a Power Electronic Converter on Junction Temperature of Power GaN HEMTs

Cited by 1 publication

References 22 publications

A Critical Analysis and Comparison of the Effect of Source Inductance on 3- and 4-Lead SuperJunction MOSFETs Turn-Off

A Critical Analysis and Comparison of the Effect of Source Inductance on 3- and 4-Lead SuperJunction MOSFETs Turn-Off

Contact Info

Product

Resources

About