1996
DOI: 10.1021/jp9537318
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Matrix-Isolation IR and UV Spectra of Si3H8 and Si4H10:  Isomers and Conformers of Oligosilanes

Abstract: Matrix-isolation IR and UV spectra of Si 3 H 8 , i-Si 4 H 10 , and the two conformers of n-Si 4 H 10 have been recorded. A quantitative separation of the IR spectrum of n-Si 4 H 10 into contributions from the anti and gauche forms was accomplished by a combination of matrix annealing and selective monochromatic photodestruction experiments. A qualitative separation of their UV spectra was achieved as well. The IR spectra of Si 3 H 8 , i-Si 4 H 10 , and the two conformers of n-Si 4 H 10 have been assigned by co… Show more

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Cited by 48 publications
(84 citation statements)
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References 30 publications
(69 reference statements)
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“…Unlike the perfectly stable peralkylated oligosilanes forw hich much information is available, the parent oligosilanes are unstable, pyrophoric, and rarely studied. [26] (i) s Delocalization…”
Section: Methods and Resultsmentioning
confidence: 99%
“…Unlike the perfectly stable peralkylated oligosilanes forw hich much information is available, the parent oligosilanes are unstable, pyrophoric, and rarely studied. [26] (i) s Delocalization…”
Section: Methods and Resultsmentioning
confidence: 99%
“…2) and carbon disulfide is transparent for the CO 2 laser radiation. The absorption in trisilane (5.8 Â 10 À2 cm À1 Torr À1 ) is due to d asym (SiH 3 ) [29,30] vibrational mode.…”
Section: Resultsmentioning
confidence: 99%
“…10 0 0 transition (944.19 cm À1 ) of the CO 2 laser (Fig. 1) and the absorption of laser radiation in these compounds is due to d asym (SiH 3 ) [23,24] and d(CH 2 ) [25] vibrational modes (respective molar absorbances 6.8 Â 10 À3 cm À1 Torr À1 and 5.4 Â 10 À4 cm À1 Torr À1 ).…”
Section: Laser Co-decomposition and Volatile Productsmentioning
confidence: 95%
“…They lack a contribution at 411 cm À1 of elemental sulfur (S 8 , [31]) and show continuous absorptions within 600-1000 cm À1 . This region includes n(Si-C) ($800 cm À1 ), n(C-C-S) (650-900 cm À1 ) and n(S-C-S) (940-960 cm À1 ) bands [30,33] and also bands at 860 and 900 cm À1 (d(SiH n ) modes [24,32]) that are distinctly seen with deposits obtained with the trisilane-rich mixture (Fig. 5c) Table 2) in which case the n(Si-H) band is located at highest wavenumber.…”
Section: Properties Of Solid Depositsmentioning
confidence: 99%