Mathematical model of DC characteristic of SiGe charge injection transistors

Shen, Bin; Zhang, Heming; Hu, Huiyong; Rong-Xi, Xuan; Dai, Xianying

doi:10.7498/aps.56.1105

Cited by 4 publications

(3 citation statements)

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“…´respectively. The p-type polysilicon is grown as an epitaxial base region, which is above the shallow trench isolation (STI) around the emitter [31,32]. The physical models used in the TCAD and the parameters simulated include the Shockley-Read-Hall (SRH), Gaussian radial profile, Boltzmann statistics, electric field, band-gap narrowing effect (BGN), Auger recombination, impacts of ionization, doping, and carrier scattering on mobility [33][34][35][36][37].…”

Section: Sige Hbt Structure and Physical Modelsmentioning

confidence: 99%

Simulation and analysis of inverse-mode operation of single event transient mechanisms on NPN-SiGe HBT

Adekoya,

Liu,

Wang

et al. 2024

Phys. Scr.

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This paper presents single-event transient (SET) mechanisms on a 3D NPN-SiGe HBT structure using Silvaco TCAD simulations under three conditions. The three conditions were the linear energy transfer (LET), striking angle, and bias voltage. A three-dimensional (3D) structure of the NPN-SiGe HBT was built on the DevEdit simulator and simulated on Deckbuild using device and radiation effect simulations. The length, breadth, and height of the structure were; 6.0 µm, 4.55 µm, and 2.5 µm, with doping concentrations of cm3 and cm3. The results obtained show that the TCAD simulation on the three conditions significantly influences the trends of heavy ion transient current and collected charge. The results reveal that the increased collected charge and wider pulse width result from the bipolar amplification effect. The drift and diffusion mechanisms also influence the increase in the emitter current as the ion loses energy along the trajectory path.

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Section: Sige Hbt Structure and Physical Modelsmentioning

confidence: 99%

Simulation and analysis of inverse-mode operation of single event transient mechanisms on NPN-SiGe HBT

Adekoya,

Liu,

Wang

et al. 2024

Phys. Scr.

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“…The gradient bandgap of the base region im-proved the device performance because the gain and frequency were proportional to exp(∆E g /kT ). [12,13] In consequence, the doping concentrations of emitter and base are heavy, reaching to 1 × 10 20 cm −3 and 1 × 10 19 cm −3 respectively, to reduce resistance. A passivation oxide layer covers the top of the device, forming an EB Spacer near the E/B junction.…”

Section: Experiments Details 21 Sige Hbt Technologymentioning

confidence: 99%

Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor

et al. 2018

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The synergistic effect of total ionizing dose (TID) on single event effect (SEE) in SiGe heterojunction bipolar transistor (HBT) is investigated in a series of experiments. The SiGe HBTs after being exposed to 60 Co γ irradiation are struck by pulsed laser to simulate SEE. The SEE transient currents and collected charges of the un-irradiated device are compared with those of the devices which are irradiated at high and low dose rate with various biases. The results show that the SEE damage to un-irradiated device is more serious than that to irradiated SiGe HBT at a low applied voltage of laser test. In addition, the γ irradiations at forward and all-grounded bias have an obvious influence on SEE in the SiGe HBT, but the synergistic effect after cutting off the γ irradiation is not significant. The influence of positive oxide-trap charges induced by TID on the distortion of electric field in SEE is the major factor of the synergistic effect. Moreover, the recombination of interface traps also plays a role in charge collection.

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“…The high frequency and speed of SiGe HBT technology does not rely on the traditional method of reducing the feature size, but depend on the doped Ge in base region. [20,21] It follows that, the feature size of the SiGe HBT is in microns. Thus, the drift-diffusion model is used as the physical method.…”

Section: See Simulationmentioning

confidence: 99%

Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor

Zhang¹,

He²,

Guo³

et al. 2017

Chinese Phys. B

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The fabrication process dependent effects on single event effects (SEEs) are investigated in a commercial silicongermanium heterojunction bipolar transistor (SiGe HBT) using three-dimensional (3D) TCAD simulations. The influences of device structure and doping concentration on SEEs are discussed via analysis of current transient and charge collection induced by ions strike. The results show that the SEEs representation of current transient is different from representation of the charge collection for the same process parameters. To be specific, the area of C/S junction is the key parameter that affects charge collection of SEE. Both current transient and charge collection are dependent on the doping of collector and substrate. The base doping slightly influences transient currents of base, emitter, and collector terminals. However, the SEEs of SiGe HBT are hardly affected by the doping of epitaxial base and the content of Ge.

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Mathematical model of DC characteristic of SiGe charge injection transistors

Cited by 4 publications

References 0 publications

Simulation and analysis of inverse-mode operation of single event transient mechanisms on NPN-SiGe HBT

Simulation and analysis of inverse-mode operation of single event transient mechanisms on NPN-SiGe HBT

Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor

Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor

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