Simulation and analysis of inverse-mode operation of single event transient mechanisms on NPN-SiGe HBT

Abstract

This paper presents single-event transient (SET) mechanisms on a 3D NPN-SiGe HBT structure using Silvaco TCAD simulations under three conditions. The three conditions were the linear energy transfer (LET), striking angle, and bias voltage. A three-dimensional (3D) structure of the NPN-SiGe HBT was built on the DevEdit simulator and simulated on Deckbuild using device and radiation effect simulations. The length, breadth, and height of the structure were; 6.0 µm, 4.55 µm, and 2.5 µm, with doping concentrations of cm3 and cm3. The results obtained show that the TCAD simulation on the three conditions significantly influences the trends of heavy ion transient current and collected charge. The results reveal that the increased collected charge and wider pulse width result from the bipolar amplification effect. The drift and diffusion mechanisms also influence the increase in the emitter current as the ion loses energy along the trajectory path.