Materials Science Challenges to Graphene Nanoribbon Electronics

Saraswat, Vivek; Jacobberger, Robert M.; Arnold, Michael S.

doi:10.1021/acsnano.0c07835

Cited by 142 publications

(120 citation statements)

References 482 publications

Supporting

Mentioning

111

Contrasting

Unclassified

Order By: Relevance

“…Besides the structural imperfections, tunneling through a Schottky barrier (SB) at the contacts [12,13] also limits the performance of the devices, which is also commonly seen in bottom-up GNR FETs. [8] The presence of the SB at the Pd-C-NPG interface is evident by non-linear behavior at low bias in the I d -V d characteristics, as shown in the inset of Figure 2f. The work-function engineering of the contact metal or doping of the contact could potentially eliminate SB effects.…”

Section: Resultsmentioning

confidence: 91%

“…The work-function engineering of the contact metal or doping of the contact could potentially eliminate SB effects. [8]…”

Section: Resultsmentioning

confidence: 99%

“…Nanoporous graphene (NPG) materials have been widely studied and exploited for opening a band gap in bulk graphene while maintaining its high mobility, which is required for highperformance electronic devices such as field-effect transistors the integration of bottom-up synthesized graphene nanomaterials in transistors, such as facilitating transfer onto dielectric surfaces with high-yield and realizing uniformity without suffering from lateral displacement and aggregation effects observed after transfer of 1D GNRs. [8][9][10] Furthermore, working device yield and performance may be enhanced by increasing conduction pathways. Despite the promise of bottom-up synthesized NPG materials, their application in FETs has not been fully exploited yet, in contrast to GNR FETs, which have seen significant progress.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Bottom‐Up Synthesized Nanoporous Graphene Transistors

Jacobse

Llinas

Lin

et al. 2021

Adv Funct Materials

View full text Add to dashboard Cite

Nanoporous graphene (NPG) can exhibit a uniform electronic band gap and rationally-engineered emergent electronic properties, promising for electronic devices such as field-effect transistors (FETs), when synthesized with atomic precision. Bottom-up, on-surface synthetic approaches developed for graphene nanoribbons (GNRs) now provide the necessary atomic precision in NPG formation to access these desirable properties. However, the potential of bottom-up synthesized NPG for electronic devices has remained largely unexplored to date. Here, FETs based on bottom-up synthesized chevron-type NPG (C-NPG), consisting of ordered arrays of nanopores defined by laterally connected chevron GNRs, are demonstrated. C-NPG FETs show excellent switching performance with on-off ratios exceeding 10 4 , which are tightly linked to the structural quality of C-NPG. The devices operate as p-type transistors in the air, while n-type transport is observed when measured under vacuum, which is associated with reversible adsorption of gases or moisture. Theoretical analysis of charge transport in C-NPG is also performed through electronic structure and transport calculations, which reveal strong conductance anisotropy effects in C-NPG. The present study provides important insights into the design of high-performance graphene-based electronic devices where ballistic conductance and conduction anisotropy are achieved, which could be used in logic applications, and ultra-sensitive sensors for chemical or biological detection.

show abstract

Section: Resultsmentioning

confidence: 91%

“…The work-function engineering of the contact metal or doping of the contact could potentially eliminate SB effects. [8]…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Bottom‐Up Synthesized Nanoporous Graphene Transistors

Jacobse

Llinas

Lin

et al. 2021

Adv Funct Materials

View full text Add to dashboard Cite

show abstract

“…In the last decade, most efforts of nanotechnology researchers have been devoted to the study and characterization of electronic properties of graphene [ 1 , 2 , 3 , 4 , 5 , 6 , 7 ]. Indeed, graphene is a two-dimensional honeycomb structure with high electron mobility and stable lattice which has different classifications [ 8 , 9 , 10 , 11 ], such as graphene nanoscroll, twisted graphene, graphene nanoribbon, and few-layer graphene [ 12 , 13 , 14 , 15 , 16 , 17 ]. Among these different types of graphene, twisted graphene is a new class and interesting [ 18 ].…”

Section: Introductionmentioning

confidence: 99%

Monolayer Twisted Graphene-Based Schottky Transistor

Ahmadi

Koloor

et al. 2021

Materials

View full text Add to dashboard Cite

The outstanding properties of graphene-based components, such as twisted graphene, motivates nanoelectronic researchers to focus on their applications in device technology. Twisted graphene as a new class of graphene structures is investigated in the platform of transistor application in this research study. Therefore, its geometry effect on Schottky transistor operation is analyzed and the relationship between the diameter of twist and number of twists are explored. A metal–semiconductor–metal twisted graphene-based junction as a Schottky transistor is considered. By employing the dispersion relation and quantum tunneling the variation of transistor performance under channel length, the diameter of twisted graphene, and the number of twists deviation are studied. The results show that twisted graphene with a smaller diameter affects the efficiency of twisted graphene-based Schottky transistors. Additionally, as another main characteristic, the ID-VGS is explored, which indicates that the threshold voltage is increased by diameter and number of twists in this type of transistor.

show abstract

“…There is huge interest in the thermal properties of twodimensional (2D) materials, motivated by applications to thermal management [1][2][3][4], thermoelectric devices [5][6][7][8] and nanoscale fabrication [9][10][11][12]. While nanoscale constrictions are of great importance for their electrical transport characteristics, particularly in the quantum regime [13,14], they also promote enhanced Joule selfheating and thermoelectric coefficients [15][16][17][18]. For such structures, scanning thermal microscopy [4] is an ideal tool to map surface temperatures with spatial resolution of a few nanometers, as applied to carbon nanotubes [19], nanowires [20][21][22][23] and 2D materials [17,18,[24][25][26][27][28][29][30][31][32][33][34].…”

Section: Introductionmentioning

confidence: 99%

The heat equation for nanoconstrictions in 2D materials with Joule self-heating

Ward,

McCann

2021

Preprint

View full text Add to dashboard Cite

We consider the heat equation for two-dimensional materials in the presence of heat flow into a substrate and Joule heating due to electrical current. We compare devices including a nanowire of constant width and a bow tie (or wedge) constriction of varying width, and we derive approximate one-dimensional heat equations for them. For example, a bow tie constriction is described by the modified Bessel equation of zero order. We compare steady state analytic solutions of the approximate equations with numerical results obtained by a finite element method solution of the two-dimensional equation. Using these solutions, we describe how the thermal conductivity, thermal resistance to the substrate and device geometry combine to produce different peak temperature values and spatial profiles of the temperature.

show abstract

Materials Science Challenges to Graphene Nanoribbon Electronics

Cited by 142 publications

References 482 publications

Bottom‐Up Synthesized Nanoporous Graphene Transistors

Bottom‐Up Synthesized Nanoporous Graphene Transistors

Monolayer Twisted Graphene-Based Schottky Transistor

The heat equation for nanoconstrictions in 2D materials with Joule self-heating

Contact Info

Product

Resources

About