2021
DOI: 10.1002/adfm.202103798
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Bottom‐Up Synthesized Nanoporous Graphene Transistors

Abstract: Nanoporous graphene (NPG) can exhibit a uniform electronic band gap and rationally-engineered emergent electronic properties, promising for electronic devices such as field-effect transistors (FETs), when synthesized with atomic precision. Bottom-up, on-surface synthetic approaches developed for graphene nanoribbons (GNRs) now provide the necessary atomic precision in NPG formation to access these desirable properties. However, the potential of bottom-up synthesized NPG for electronic devices has remained larg… Show more

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Cited by 22 publications
(15 citation statements)
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References 45 publications
(89 reference statements)
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“…The super-linearity of the I D -V D indicates the presence of a finite Schottky Barrier (SB) at the Pd-GNR interface, which is limiting the performance of the 5-AGNR devices, as also commonly reported for FETs made with other bottom-up synthesized GNRs. [21,49,51] The work-function engineering of the contact metal or doping of the contact area could potentially eliminate the SB effects. [52]…”
Section: Device Integration and Electrical Characterizationmentioning
confidence: 99%
“…The super-linearity of the I D -V D indicates the presence of a finite Schottky Barrier (SB) at the Pd-GNR interface, which is limiting the performance of the 5-AGNR devices, as also commonly reported for FETs made with other bottom-up synthesized GNRs. [21,49,51] The work-function engineering of the contact metal or doping of the contact area could potentially eliminate the SB effects. [52]…”
Section: Device Integration and Electrical Characterizationmentioning
confidence: 99%
“…A short-channel field-effect transistor (FET) device was fabricated using a chevron type 2D GNR, and exhibited excellent switching behavior with superior on-off ratios of 10 4 , in comparison with those of graphene. 131,132 Interestingly, the FET device exhibited n-type charge transport behavior under vacuum while the device in air converted to a p-type transistor. These device behavior changes are attributed to the absorption of gases or moisture that induced changes in the electronic band structures.…”
Section: Polymer Chemistry Reviewmentioning
confidence: 99%
“…However, a detail slipped out of focus: most of the studies include the bulk (the graphene surface itself) and ignore the edges 15 which, in some cases, largely determine the properties of the carbon-based materials, as observed e.g. for porous graphene 16,17 or graphene nanoribbons (GNRs). 18–20 For this reason, we decided to test experimentally how GNRs interact with water.…”
Section: Introductionmentioning
confidence: 99%