Materials and Technologies for III-V MOSFETs

Oktyabrsky, S.; Nishi, Yoshio; Koveshnikov, S.; Wang, Wei; Goel, N.; Tsai, W.

doi:10.1007/978-1-4419-1547-4_8

Cited by 34 publications

(47 citation statements)

References 154 publications

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“…Yet, the reported admittance characteristics of wellbehaved dielectric/III-V interfaces with different dielectrics and/or dielectrics deposited by different methods are remarkably similar. 5,15,24 The similarity in the observed characteristics of MOSCAPs in the literature is in keeping with a large body of work on III-V Schottky barriers and surfaces that have shown that semiconductor surface Fermi level pinning is largely caused by defects in the III-V semiconductor and not by the specific surface adsorbate or metal. 3,4 While these results point to semiconductor defects as the origin, the mechanisms by which they could cause frequency dispersion in accumulation are not understood.…”

supporting

confidence: 73%

“…Specifically, for dielectrics on In 0.53 Ga 0.47 As, the D it near midgap becomes very large. 5,6,15,24 At sufficient positive gate bias, the metal Fermi level will thus align with the high density of traps and electrons can tunnel from the traps to the metal. The ac signal causes the metal Fermi level (E Fm ) to oscillate through E t (trap level).…”

Section: -mentioning

confidence: 99%

“…The interface trap state distribution in the band gap depends largely on the specific III-V semiconductor. [3][4][5][6] For example, the D it of dielectric/n-In 0.53 Ga 0.47 As interfaces is sufficiently low to achieve band bending (semiconductor Fermi level movement) in the upper half of the semiconductor band gap under an applied voltage, 7,8 resulting in significant device demonstrations. 9,10 One of the most important unresolved issues, however, remains the lack of understanding of the large frequency dispersion that is observed in accumulation, for example, for dielectrics on n-In 0.53 Ga 0.47 As.…”

mentioning

confidence: 99%

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Frequency dispersion in III-V metal-oxide-semiconductor capacitors

Stemmer

Chobpattana

Rajan

2012

Applied Physics Letters

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A recombination-controlled tunneling model is used to explain the strong frequency dispersion seen in the accumulation capacitance and conductance of dielectric/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors. In this model, the parallel conductance is large when, at positive gate biases, the metal Fermi level lines up with a large density of interface states in the In0.53Ga0.47As band gap. It is shown that the model explains in a semi-quantitative manner the experimentally observed capacitor characteristics, including a peak in parallel conductance/frequency (Gp/ω) versus log frequency curves at positive gate bias and the dependence of the frequency dispersion on the dielectric thickness.

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supporting

confidence: 73%

Section: -mentioning

confidence: 99%

mentioning

confidence: 99%

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Frequency dispersion in III-V metal-oxide-semiconductor capacitors

Stemmer

Chobpattana

Rajan

2012

Applied Physics Letters

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“…10,11 In particular, for Al 2 O 3 / III-V interfaces, forming gas anneals ͑which contain a few percent hydrogen͒ have resulted in significant improvements in the capacitance-voltage ͑CV͒ characteristics, with reduced interface trap response at negative gate biases for n-type channels and a lowering of the frequency dispersion in accumulation. 10,11 In this paper we show that forming gas anneals can reduce the midgap-D it of HfO 2 / In 0.53 Ga 0.47 As interfaces to a sufficiently low level that--in conjunction with a low equivalent oxide thicknesses ͑EOT͒--the Fermi level can be moved across midgap. Evidence for an unpinned Fermi level is provided by a large semiconductor band bending deep into the semiconductor band gap and by efficient movement of parallel conductance peaks.…”

Section: Introductionmentioning

confidence: 99%

Effect of postdeposition anneals on the Fermi level response of HfO2/In0.53Ga0.47As gate stacks

Hwang

Engel‐Herbert

Rudawski

et al. 2010

Journal of Applied Physics

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The electrical characteristics, in particular interface trap densities, oxide capacitance, and Fermi level movement, of metal oxide semiconductor capacitors with HfO 2 gate dielectrics and In 0.53 Ga 0.47 As channels are investigated as a function of postdeposition annealing atmosphere. It is shown, using both conductance and Terman methods, that the Fermi level of nitrogen annealed stacks is effectively pinned at midgap. In contrast, samples annealed in forming gas show a large band bending in response to an applied gate voltage and a reduced midgap interface trap density compared to those annealed in nitrogen.

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“…integrated-circuit applications (e.g., [1][2][3][4][5]). The common target in the research and development of semiconductor materials for the devices, that save energy and own extended lifetime, is to improve the crystal quality.…”

mentioning

confidence: 99%

Unusual Bi-Containing Surface Layers of III–V Compound Semiconductors

Laukkanen

Punkkinen

2013

Bismuth-Containing Compounds

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In this chapter, it is first described how the surface science and engineering of the III-V compound semiconductors are relevant to developing the semiconductorbased materials, including bismuth (Bi) containing III-V films, for improved electronics and optoelectronics devices. After that the general properties of the III-V(100) surfaces, which usually undergo strong atomic rearrangements (reconstructions), are reviewed. Before focusing on the unusual Bi-induced III-V(100)(2 × 1) reconstructions and Bi-induced changes in the III-V(100)(2 × 4) surfaces, it is described the experimental and computational research methods used as well as the advantages obtained by combining the experimental and computational results in the analysis. Calculational results reveal an interesting correlation between the geometry and surface band structure of the (2 × 1) reconstruction, and the relative stability of the (2 × 1) reconstruction. Role of Semiconductor Surfaces in Development of Device MaterialsMonocrystalline III-V compound semiconductor (e.g., GaAs, InP, and GaSb) films are the established materials of devices like laser diodes ( Fig. 10.1) and mobilephone transistors, also in future very probably. Furthermore, the integration of III-V's films on silicon (Si) semiconductor substrates, the latter of which form the well-refined basis for most electronics components, has been intensively investigated for developing, for example, the transistors of radio-frequency and

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Materials and Technologies for III-V MOSFETs

Cited by 34 publications

References 154 publications

Frequency dispersion in III-V metal-oxide-semiconductor capacitors

Frequency dispersion in III-V metal-oxide-semiconductor capacitors

Effect of postdeposition anneals on the Fermi level response of HfO2/In0.53Ga0.47As gate stacks

Unusual Bi-Containing Surface Layers of III–V Compound Semiconductors

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