Material and process related limitations of InP HEMT performance

Hove, M. Van; Finders, Jo; Zanden, K. van der; Raedt, W. De; Rossum, Mark C. W. van; Baeyens, Y.; Schreurs, Dominique; Menozzi, Roberto

doi:10.1016/s0921-5107(96)01777-1

Cited by 2 publications

(1 citation statement)

References 8 publications

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“…After wet mesa etching, the ohmic metal scheme is applied by e-beam evaporation [12]. The next level is Cr/Au and defines contact pads, transmission lines, and ground planes.…”

Section: Device Fabricationmentioning

confidence: 99%

Reliability testing of InP HEMT's using electrical stress methods

Zanden

Schreurs

Menozzi

et al. 1999

IEEE Trans. Electron Devices

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In this paper, we discuss the results of three different electrical stress tests on InP-based HEMT's and their implications toward reliability. These are hot electron (HE) stress, transmission line pulse (TLP) measurements, and RF overdrive stress. Some processing parameters have been varied to investigate their influence on reliability issues. HE stress is performed on a set of Si 3 N 4 passivated devices with increasing recess width. Degradation is observed to be largely dependent on recess width, due to changes at the InAlAs-Si 3 N 4 interface. With TLP measurements, an ESD-like reliability study is performed on devices with different types of Schottky barriers. Although epilayers with In0:40Al0:60 as Schottky material show improved breakdown and leakage characteristics over In0:52Al0:48As, pulsed stress tests reveal an earlier breakdown. Finally, the degradation under large-signal RF overdrive stress is determined with a nonlinear network measurement system (NNMS). Both on-and off-state degradation are studied with this setup. Results appeared to be strongly dependent on the phase difference between the stress voltage waves applied at the device ports.

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“…After wet mesa etching, the ohmic metal scheme is applied by e-beam evaporation [12]. The next level is Cr/Au and defines contact pads, transmission lines, and ground planes.…”

Section: Device Fabricationmentioning

confidence: 99%