Maskless inverted pyramid texturization of silicon

Abstract

We discovered a technical solution of such outstanding importance that it can trigger new approaches in silicon wet etching processing and, in particular, photovoltaic cell manufacturing. The so called inverted pyramid arrays, outperforming conventional pyramid textures and black silicon because of their superior light-trapping and structure characteristics, can currently only be achieved using more complex techniques involving lithography, laser processing, etc. Importantly, our data demonstrate a feasibility of inverted pyramidal texturization of silicon by maskless Cu-nanoparticles assisted etching in Cu(NO3)2 / HF / H2O2 / H2O solutions and as such may have significant impacts on communities of fellow researchers and industrialists.

18.87%-efficient inverted pyramid structured silicon solar cell by one-step Cu-assisted texturization technique

“…1(a), we notice that Cu 2+ ions preferentially capture electrons from the kinks and steps of Si substrate and Cu-NPs originally adsorb there due to the surface free energy is much higher there than the flat areas [20]. The pit is becoming larger and deeper by Cu-assisted etching for 25 s, as shown in Ag-NPs [15,17]. In fact, due to a much weaker electron capturing ability of Cu 2+ than that of Ag + , and a difference of electron supplying rates in Si (100) and (111) planes, Cu-NPs population on c-Si appear to be anisotropic, which will induce an anisotropic etching and the formation of inverted pyramid [17].…”

“…We perform a systematic study of the inverted pyramid structure obtained by simple and low-cost Cu-NPs assisted chemical etching of Si at 50 ℃. The underlying principles are based on the electrochemical reaction between Si and Cu 2+ /Cu, which have been systematically studied in our previous work [17]. Fig.…”

“…As a result of our recent work, inverted pyramid structures, instead of above-mentioned nanostructures, were fabricated by one-step maskless Cu-assisted texturization of the raw Si [17].…”

Study and analysis the Cu nanoparticle assisted texturization forming low reflective silicon surface for solar cell application

“…Electrochemical reaction took place in between Si and Cu + ions through Cu-NPs-assisted anisotropic etching mechanism. An electrochemical energy difference between Cu + /Cu-NPs and Si facilitates this reaction.The entire process can be described by the following reactions [3,13,17]:…”

Bright ways to utilize the sun

“…Conventionally this is achieved by texturing the top surface of a Si PV cell. 73 The decrease in reflection directly results in a higher photon absorption and thus a higher Jsc, since more photons are available for charge carrier generation.…”