MAPPER: high-throughput maskless lithography

Wieland, Marco; Boer, G. de; Berge, G. F. ten; Kervinck, M. van; Jager, R.; Peijster, J. J. M.; Slot, E.; Steenbrink, S. W. H. K.; Teepen, T. F.; Kampherbeek, B. J.

doi:10.1117/12.849480

Cited by 51 publications

(20 citation statements)

References 3 publications

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“…MEBML2 is superior to single beam EBL in terms of throughput, but any single beam error may cause writing defects. The multiple beam strategy has been realized through the maturation of MEMS technology [141][142][143][144][145], high-speed computing, and telecommunication technology during this century. The primary manufactures include MAPPER, ADVENTEST, Canon, KLA-Tencor, Multibeam, IMS, and Leica.…”

Section: Maskless Lithographymentioning

confidence: 99%

Next-generation lithography for 22 and 16 nm technology nodes and beyond

2011

Sci. China Inf. Sci.

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In this paper, next-generation lithography (NGL) for the 22 and 16 nm technology nodes and beyond is reviewed. A broad range of topics, including history, technologies, critical challenges, and the most plausible candidates are discussed. The 22 and 16 nm technology nodes rely on NGL. NGLs have been extensively studied. Because of technological issues, the semiconductor industry has stopped pursuing several NGLs, such as X-ray proximity lithography, ion projection lithography, and scattering with angular limitation projection electron lithography. Currently, the primary candidate technologies are extreme ultraviolet lithography (EUVL), maskless lithography (ML2), and nanoimprint lithography (NIL), with EUVL being the leading candidate. Since EUVL was first proposed in 1988, many studies have been conducted. Currently, there is no "show stopper" for EUVL. Moreover, challenges are present in almost all aspects of EUVL technology. Almost all primary semiconductor manufacturing companies plan to implement commercial pre-production step-and-scan exposure tools in 2011. However, EUVL power at an intermediate focusing level has not yet met the volume manufacturing requirements. EUVL resists have been significantly improved recently, but there is still a critical need to meet requirements on resolution, line width roughness, and sensitivity. Creating a defect-free EUVL mask is another obstacle to the application of EUVL. ML2 and NIL, like EUVL, have also undergone significant progress recently, but throughput, defect control, and cost remain the critical impediments for practical application.

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Section: Maskless Lithographymentioning

confidence: 99%

Next-generation lithography for 22 and 16 nm technology nodes and beyond

2011

Sci. China Inf. Sci.

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“…SCALPEL 8 9 and PREVAIL 10 11 12 13 were two competing Electron Projection Lithography (EPL) programs that demonstrated very good progress but did not utilize one of EBL's most important assets, maskless capability. Currently there are primarily three maskless EBDW programs under development: MAPPER 14 , IMS 15 and REBL 16 17 18 . This paper describes the latest advances in the REBL Nanowriter development program.…”

Section: Introductionmentioning

confidence: 99%

New advances with REBL for maskless high-throughput EBDW lithography

Petric

Bevis

McCord

et al. 2011

Alternative Lithographic Technologies III

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REBL (Reflective Electron Beam Lithography) is a program for the development of a novel approach for highthroughput maskless lithography. The program at KLA-Tencor is funded under the DARPA Maskless Nanowriter Program. A DPG (digital pattern generator) chip containing over 1 million reflective pixels that can be individually turned on or off is used to project an electron beam pattern onto the wafer. The DARPA program is targeting 5 to 7 wafers per hour at the 45 nm node, and this paper will describe improvements to both increase the throughput as well as extend the system to the 2x nm node and beyond.This paper focuses on three specific areas of REBL technology. First, a new column design has been developed based on a Wien filter to separate the illumination and projection beams. The new column design is much smaller, and has better performance both in resolution and throughput than the first column which used a magnetic prism for separation. This new column design is the first step leading to a multiple column system. Second, the rotary stage latest results of a fully integrated DPG CMOS chip with lenslets will be reviewed. An array of over 1 million micro lenses which is fabricated on top of the CMOS DPG chip has been developed. The microlens array eliminates crosstalk between adjacent pixels, maximizes contrast between on and off states, and provides matching of the NA between the DPG reflector and the projection optics.

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“…Also, several innovative MEBL systems have been under development and have shown very promising lithography performance and cost effectiveness [13], [16], [17], [20]. Due to the deflection limitation of each beam and parallel writing strategies in MEBL, a layout (a main field) is split into stripes (subfields) as shown in Fig.…”

mentioning

confidence: 99%

Stitch-Aware Routing for Multiple E-Beam Lithography

Liu

Fang

Chang

2015

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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Multiple e-beam lithography (MEBL) is one of the most promising next generation lithography technologies for high volume manufacturing, which improves the most critical issue of conventional single e-beam lithography, throughput, by simultaneously using thousands or millions of e-beams. For parallel writing in MEBL, a layout is split into stripes and patterns are cut by stripe boundaries, which are defined as stitching lines. Critical patterns cut by stitching lines could suffer from severe pattern distortion or even yield loss. Therefore, considering the positions of stitching lines and avoiding stitching line-induced bad patterns are required during layout design. In this paper, we propose the first work of stitch-aware routing framework for MEBL based on a two-pass bottom-up multilevel router. We first identify three types of stitching line-induced bad patterns which should not exist in an MEBL-friendly routing solution. Then, stitch-aware routing algorithms are, respectively, developed for global routing, layer/track assignment, and detailed routing. Experimental results show that our stitch-aware routing framework can effectively reduce stitching line-induced bad patterns and thus may not only improve the manufacturability but also facilitate the development of MEBL.

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MAPPER: high-throughput maskless lithography

Cited by 51 publications

References 3 publications

Next-generation lithography for 22 and 16 nm technology nodes and beyond

Next-generation lithography for 22 and 16 nm technology nodes and beyond

New advances with REBL for maskless high-throughput EBDW lithography

Stitch-Aware Routing for Multiple E-Beam Lithography

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