Manufacturing of laser diodes grown by molecular beam epitaxy for coarse wavelength division multiplexing systems

Anselm, K.A.; Hwang, W.-Y.; Ren, Hongwen; Zhang, D.; Um, J.

doi:10.1116/1.2837846

Cited by 2 publications

(1 citation statement)

References 7 publications

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“…Bandgap engineering techniques addressing fabrication of the III-V quantum semiconductor (QS) wafers with spatially selected regions of different bandgap energy material have been of great interest for fabrication of monolithically integrated photonic devices (MIPDs) [1][2]. The natural approaches to spatially modify the bandgap of a QS wafer are based on selective area epitaxy [3][4][5][6] and selective etch-re-growth [7][8][9]. Fabrication of numerous MIPDs has been demonstrated with these techniques [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Iterative bandgap engineering at selected areas of quantum semiconductor wafers

Stanowski¹,

Martin²,

Arès³

et al. 2009

Opt. Express

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We report on the application of a laser rapid thermal annealing technique for iterative bandgap engineering at selected areas of quantum semiconductor wafers. The approach takes advantage of the quantum well intermixing (QWI) effect for achieving targeted values of the bandgap in a series of small annealing steps. Each QWI step is monitored by collecting a photoluminescence map and, consequently, choosing the annealing strategy of the next step. An array of eight sites, 280 mum in diameter, each emitting at 1480 nm, has been fabricated with a spectral accuracy of better than 2 nm in a standard InGaAs/InGaAsP QW heterostructure that originally emitted at 1550 nm.

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