We report on the application of a laser rapid thermal annealing technique for iterative bandgap engineering at selected areas of quantum semiconductor wafers. The approach takes advantage of the quantum well intermixing (QWI) effect for achieving targeted values of the bandgap in a series of small annealing steps. Each QWI step is monitored by collecting a photoluminescence map and, consequently, choosing the annealing strategy of the next step. An array of eight sites, 280 mum in diameter, each emitting at 1480 nm, has been fabricated with a spectral accuracy of better than 2 nm in a standard InGaAs/InGaAsP QW heterostructure that originally emitted at 1550 nm.
Opfical inferconnecfion fechnologv will be indispensable for high-bandwidfh signal bansmission in fufure transmission systems. m e opfical atfenuafion of lighf-guiding sfrucfures incorporated info printed circuit boards is an important quality characteristic and can be usefurl to describe the reliability of the waveguides. The puqose of the onolysis described in fhis paper i s fo determine fhe funcfional behaviour of an integrated polymer waveguide under fhermol stress. The data obtained will be used fo conclude obout occurring degradation mechanisms. In order fo measure fhe opfical attenuation under elevafed temperature dedicated sef-ups have been developed. One special sef-up allows affenuation measuremenfs with an increased repeatability by utilization of an immersion liquid. It also enables one to continuously track the changes of the optical losses at dzxerenf femperofures. Moin purpose of fhe measurement is testing fhe reliability of new elaborated fechnologv ofpolymer waveguides. Firsf measurement results will be presented.
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