Manufacture of specific structure of aluminum-doped zinc oxide films by patterning the substrate surface

Jiang, Xin; Jia, Chun‐Lin; Szyszka, Bernd

doi:10.1063/1.1473683

Cited by 95 publications

(49 citation statements)

References 20 publications

(11 reference statements)

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“…This result indicates that the films are composed of a wurtzite type hexagonal structure and have a preferential orientation of caxis normal to the substrate plane. It is well known that ZnO films consist of columnar grains grown with the c-axis orientation [27]. Therefore, this result indicates that the columnar-structured IZO thin films with vertical direction grown at pulse frequency of 30 kHz have highly c-axis crystallites to the substrate.…”

Section: Resultsmentioning

confidence: 77%

Physical properties of transparent conducting indium doped zinc oxide thin films deposited by pulsed DC magnetron sputtering

et al. 2008

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Transparent conducting In-doped (1at.%) zinc oxide (IZO) thin films are deposited on glass substrate by bipolar pulsed DC magnetron sputtering. We have investigated the effect of pulse frequency on the physical properties of the IZO films. A highly c-axis oriented IZO thin films were grown in perpendicular to the substrate. At optimal deposition conditions, IZO films with a smoothest surface roughness of ∼3.6 nm, a low-resistivity of 5.8× 10 −3 Ωcm, and a high mobility of 14 cm/Vs were achieved. The optical spectra showed a high transmittance of above 85% in the UV-visible region and exhibited the absorption edge of near 350 nm. In micro-Raman, we observed the three phonon modes of host ZnO, which are E 2 low , E 2 high , and A 1 modes, and the three additional modes. The origin of three additional modes is attributed to the host lattice defect due to the effect of In dopant and increasing the pulse frequency.

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Section: Resultsmentioning

confidence: 77%

Physical properties of transparent conducting indium doped zinc oxide thin films deposited by pulsed DC magnetron sputtering

et al. 2008

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“…Moreover, it has been observed that ͑0002͒ lattice fringes along the substrate plane immediately appear at the interface between the substrate and the film; a similar result has been also reported in the case of relatively thick films. 8 These results provide us with strong evidence that, even at a thickness of only 30 nm, the film is composed of the equiaxed columnar grains grown from the initial stage of film deposition.…”

mentioning

confidence: 67%

Low resistivity Ga-doped ZnO thin films of less than 100nm thickness prepared by ion plating with direct current arc discharge

Yamada

Miyake

Kishimoto

et al. 2007

Applied Physics Letters

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Low resistivity Ga-doped ZnO films were prepared on a glass substrate by ion plating with direct current arc discharge. Thickness dependent changes in the electrical properties of the films are reported, focusing on the thin films of less than 100 nm thickness. Structural analyses showed that the thinnest film of 30 nm thickness consists of well-oriented columnar grains normal to the substrate, and the resistivity was as low as 4.4ϫ 10 −4 ⍀ cm. The changes in lattice strain and c-axis fluctuation with the growth of grains are also shown to be associated with the electrical properties.

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“…The surface stresses for most materials are of the same order of magnitude as the corresponding surface energy values [29]. For ZnO, f 1 and f 2 are of the order of 2 N/m [32]. Figure 8(b) shows the approximate magnitude of the internal stress as a function of size.…”

Section: Mechanical Response and Effect Of Surface Stressmentioning

confidence: 95%

Surface-effects-dominated thermal and mechanical responses of zinc oxide nanobelts

Kulkarni

Zhou

2006

Acta Mech Mech Sinica

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Molecular dynamics (MD) simulations are carried out to characterize the mechanical and thermal responses of [0110]-oriented ZnO nanobelts with lateral dimensions of 21.22 Å × 18.95 Å, 31.02 Å × 29.42 Å and 40.81 Å × 39.89 Å over the temperature range of 300-1000 K. The Young's modulus and thermal conductivity of the nanobelts are evaluated. Significant surface effects on properties due to the highsurface-to-volume ratios of the nanobelts are observed. For the mechanical response, surface-stress-induced internal stress plays an important role. For the thermal response, surface scattering of phonons dominates. Calculations show that the Young's modulus is higher than the corresponding value for bulk ZnO and decreases by ∼33% as the lateral dimensions increase from 21.22 Å × 18.95 Å to 40.81 Å × 39.89 Å.The thermal conductivity is one order of magnitude lower than the corresponding value for bulk ZnO single crystal and decreases with wire size. Specifically, the conductivity of the 21.22 Å × 18.95 Å belt is approximately (31-18)% lower than that of the 40.81 Å × 39.89 Å belt over the temperature range analyzed. A significant dependence of properties on temperature is also observed, with the Young's modulus decreasing on average by 12% and the conductivity decreasing by 50% as temperature increases from 300 K to 1000 K.

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Manufacture of specific structure of aluminum-doped zinc oxide films by patterning the substrate surface

Cited by 95 publications

References 20 publications

Physical properties of transparent conducting indium doped zinc oxide thin films deposited by pulsed DC magnetron sputtering

Physical properties of transparent conducting indium doped zinc oxide thin films deposited by pulsed DC magnetron sputtering

Low resistivity Ga-doped ZnO thin films of less than 100nm thickness prepared by ion plating with direct current arc discharge

Surface-effects-dominated thermal and mechanical responses of zinc oxide nanobelts

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