Manufacturability of single and double-gate ultrathin silicon film fully depleted SOI technologies

High Performance 45nm CMOS Technology with 20nm Multi-Gate Devices

“…One of the major concerns of the ultra-thin FDSOI device is the control of silicon thickness [6]. We reported initial results in [7] and with thinner silicon layer and better uniformity across the wafer we observe tighter distributions of threshold voltage, subthreshold slope, and DIBL (Figs.…”