2007
DOI: 10.1063/1.2783275
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Manipulation of spin states by dipole polarization switching

Abstract: A ferromagnetic/ferroelectric hybrid double quantum disk structure is proposed, capable of manipulating spin states. Switching of spontaneous electric polarization of the ferroelectric quantum disk changes the potential profile of the system and induces ground state transition. Two carrier spin states are separated into ferroelectric semiconductor and diluted magnetic semiconductor disks via asymmetric Zeeman splitting of the coupled quantum disks. The proof of the spin separation resulting from the dipole pol… Show more

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Cited by 8 publications
(9 citation statements)
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“…However, in the field of ZnO-based DMSs, studies on either physical properties or applications of ZnO-based DMS quantum/nanostructures are lacking in spite of many potential applications of host material ZnO. In addition, recent theoretical reports [17][18][19] on possible applications of spinfunctional electronic devices utilizing nanostructured ZnO:TM DMSs stimulate the investigation of ZnO-based DMS quantum/nanostructures. Therefore, in order to ap-proach the device application using ZnO-based DMSs, it is essential that ZnO-based DMS quantum and nanostructures should be systematically studied.…”
Section: Tuning Of Electrical Charging Effects For Ferromagnetic Mn-dmentioning
confidence: 99%
“…However, in the field of ZnO-based DMSs, studies on either physical properties or applications of ZnO-based DMS quantum/nanostructures are lacking in spite of many potential applications of host material ZnO. In addition, recent theoretical reports [17][18][19] on possible applications of spinfunctional electronic devices utilizing nanostructured ZnO:TM DMSs stimulate the investigation of ZnO-based DMS quantum/nanostructures. Therefore, in order to ap-proach the device application using ZnO-based DMSs, it is essential that ZnO-based DMS quantum and nanostructures should be systematically studied.…”
Section: Tuning Of Electrical Charging Effects For Ferromagnetic Mn-dmentioning
confidence: 99%
“…As shown in Figure 4a, the dielectric constant of the film increases from 3.6 to 4.7 with an increasing MoS 2 concentration, which is ascribed to the high dielectric constant of the MoS 2 nanosheet. [ 41,42 ] Moreover, the dielectric loss of the composite material is also shown in Figure 4a. At low concentrations (1, 2, and 3%), the dielectric loss of the nanocomposite films are relatively stable with frequency.…”
Section: Resultsmentioning
confidence: 99%
“…Without the band offset, we find spin up and spin down states exhibit completely different spatial distribution. These behaviors of spin states may be useful for the application of spin-based memories or future spintronic devices [26][27][28].…”
Section: Introductionmentioning
confidence: 99%