We demonstrate the realization of the high-brightness and high-efficiency light emitting diodes (LEDs) using dislocation-free indium gallium nitride (InGaN)/gallium nitride (GaN) multiquantum-well (MQW) nanorod (NR) arrays by metal organic-hydride vapor phase epitaxy (MO−HVPE). MQW NR arrays (NRAs) on sapphire substrate are buried in spin-on glass (SOG) to isolating individual NRs and to bring p-type NRs in contact with p-type electrodes. The MQW NRA LEDs have similar electrical characteristics to conventional broad area (BA) LEDs. However, due to the lack of dislocations and the large surface areas provided by the sidewalls of NRs, both internal and extraction efficiencies are significantly enhanced. At 20 mA dc current, the MQW NRA LEDs emit about 4.3 times more light than the conventional BA LEDs, even though overall active volume of the MQW NRA LEDs is much smaller than conventional LEDs. Moreover, the fabrication processes involved in producing MQW NRA LEDs are almost the same for conventional BA LEDs. It is, thus, not surprising that the total yield of these MQW NRA LEDs is essentially the same as that of conventional BA LEDs. The present method of utilizing dislocation-free MQW NRA LEDs is applicable to super-bright white LEDs as well as other semiconductor LEDs for improving total external efficiency and brightness of LEDs.

No abstract

No abstract

Straight and well‐aligned GaN nanorods have been obtained by horizontal hydride vapor phase epitaxy (HVPE) at a relatively low temperature (∼ 480 °C). This catalyst‐ and template‐ independent method involves the controllable growth of GaN nanorods on a sapphire substrate, with the rods preferentially oriented along the crystal c‐axis. The Figure shows a cross‐sectional SEM image of the GaN nanorods.