Growth of GaN Nanorods by a Hydride Vapor Phase Epitaxy Method

Abstract

Straight and well‐aligned GaN nanorods have been obtained by horizontal hydride vapor phase epitaxy (HVPE) at a relatively low temperature (∼ 480 °C). This catalyst‐ and template‐ independent method involves the controllable growth of GaN nanorods on a sapphire substrate, with the rods preferentially oriented along the crystal c‐axis. The Figure shows a cross‐sectional SEM image of the GaN nanorods.

Towards high efficiency nanowire solar cells

“…So far, III-V nanowires for solar cell applications have mainly been grown by metal-organic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE). Other gas-phase epitaxy techniques such as chemical beam epitaxy [33], laser ablation [34] and hydride vapor phase epitaxy [35] have also been used for nanowire growth. In-depth reviews of the nanowire growth mechanism are available [11,[36][37][38] (other bottom-up synthesis methods are discussed in refs.…”

Three‐Dimensional Branched Nanowire Heterostructures as Efficient Light‐Extraction Layer in Light‐Emitting Diodes

“…Limited light‐extraction efficiency, originated from the total internal reflection (TIR) between the LED and surrounding medium, is currently one of the important subjects of intense research, as it retards the advancement of solid‐state lighting which is just starting to supplant fluorescent as well as incandescent lighting . Until now, various methods have been suggested to improve the light extraction efficiency such as surface roughening or texturing by photochemical etching or dry etching, introducing anti‐reflection coatings and reflective mirrors, and so forth . Hydrothermally grown 1D nanostructures are also expected to be attractive alternatives for extracting more light into the surrounding .…”

Horizontal Assembly of Single Nanowire Diode Fabricated by p-n Junction GaN NW Grown by MOCVD

“…One-dimensional GaN, nanostructure arrays with low defect density are fabricated employing porous anodic alumina films as the template and lead to high-performance devices [31]. The aligned and dislocation free GaN one-dimensional nanostructures have been fabricated using molecular beam epitaxy (MBE) [32,33], metal-organic chemical vapor deposition (MOCVD) [34][35][36][37], and hydride vapor-phase epitaxy (HVPE) [38,39]. Tang et al [40] have conducted controlled synthesis of a vertically aligned p-GaN nanorod array on an n-Si substrate by thermal evaporation of GaCl 3 .…”