A magnetic quantum dot in a diluted magnetic semiconductor/semiconductor heterostructure

Amthong, Attapon

doi:10.1016/j.spmi.2014.12.032

Cited by 1 publication

(2 citation statements)

References 30 publications

(28 reference statements)

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“…After the discovery of the giant Zeeman effect in a DMS, it becomes a promising candidate material for spintronic application. An example of applying a DMS in spintronics is the DMS‐based quantum dot . Based on the concept that spin up and spin down electrons feel different potentials in a DMS, controlling the localization of spin states is possible in the quantum dot which will be useful for spin‐based memories.…”

Section: Introductionmentioning

confidence: 99%

“…An example of applying a DMS in spintronics is the DMS-based quantum dot. [20][21][22] Based on the concept that spin up and spin down electrons feel different potentials in a DMS, controlling the localization of spin states is possible in the quantum dot which will be useful for spin-based memories. Moreover, a spin-polarized current can be obtained by a DMS tunnel junction.…”

Section: Introductionmentioning

confidence: 99%

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Coaxial Quantum Well Wires in Magnetic/Nonmagnetic Heterostructures

Sangtawee

Srikom

Amthong

2018

Physica Status Solidi (b)

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We propose a coaxial cylindrical quantum well wire which is composed of layers of a dilute magnetic semiconductor (DMS) and a nonmagnetic semiconductor (NMS). Using effective mass approximation, we present a numerical calculation of the eigenenergies and eigenstates of electrons in the heterostructure. The variation of the spin‐dependent energy levels is influenced by the giant Zeeman splitting and potential energies due to a vector potential for sufficiently low and high magnetic fields, respectively. It is found that crossing and anticrossing behaviors of energy levels can be controlled by the thickness of a NMS layer. The ballistic transport of the structure is also investigated. The ranges of the Fermi energy for obtaining full spin polarization are suggested in this work.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%