Manipulating spin polarization via spin-orbit coupling in a magnetic microstructure constructed on surface of semiconductor heterostructure

Lu, Ke-Yu; Lu, Mao‐Wang; Chen, Sai‐Yan; Cao, Xun; Huang, Xiaohong

doi:10.1016/j.jmmm.2019.165491

Cited by 23 publications

(5 citation statements)

References 30 publications

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“…For a practical semiconductor device, the effective potential function V x ( ) is usually quite complicated, it is therefore impossible to solve equation (1) exactly. Here, adopting ITMM [18], we numerically solve the Schrödinger equation of an electron in the semiconductor microelectronics device [19]. In addition, all the physical quantities are used in the dimensionless form for the convenience of discussion and calculation, e.g.…”

Section: Theory and Numerical Methodsmentioning

confidence: 99%

A numerical method to calculate dwell time for electron in semiconductor nanostructure

Xie¹,

Lu²,

Chen³

et al. 2022

Commun. Theor. Phys.

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To some extent, the operational quickness of semiconductor devices depends on the transmission time of electron through semiconductor nanostructures. However, the calculation of transmission time is very difficult, thanks to both contentious definition of the time in quantum mechanics and complicated effective potential functions experienced by electron in semiconductor devices. Here, based on improved transfer matrix method to numerically solve Schrödinger equation and H.G. Winful’s (HGW) relationship to calculate the dwell time, we develop a numerical approach to evaluate the transmission time of electron in semiconductor devices. Compared to exactly resolvable case of rectangular potential barrier, the established numerical approach possesses high precision and small error, which may be employed to explore dynamic response and operating speed of semiconductor devices. This proposed numerical method is successfully applied to the calculation of dwell time for electron in double rectangular potential barriers and the dependence of transmission time on the number of potential barriers is revealed.

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Section: Theory and Numerical Methodsmentioning

confidence: 99%

A numerical method to calculate dwell time for electron in semiconductor nanostructure

Xie¹,

Lu²,

Chen³

et al. 2022

Commun. Theor. Phys.

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“…For the MCSH shown in figure 1, equation ( 4) can be solved exactly by the transfer matrix method [13]. Wave functions of electrons are expressed, in linear combination of plane waves, by…”

Section: Theory and Methodsmentioning

confidence: 99%

“…In physics, this SFI makes electronic transport through a MCSH dependent on its spins, which results in various spin-related quantum effects appearing in a MCSH. One of them is spin filtering, which can be used to design an electron-spin filter based on the MCSH [8][9][10][11][12][13][14]. Another is the Goos-Hänchen effect [15] for electron beams in the MCSH, giving rise to the separation of electron spins in the space dimension-spatial spin splitter [16][17][18][19][20][21][22].…”

Section: Introductionmentioning

confidence: 99%

Controllable temporal spin splitter via δ-doping in parallel double δ-magnetic-barrier nanostructure

Guo¹,

Chen²,

Cao³

et al. 2021

Semicond. Sci. Technol.

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We theoretically investigate the control of spin-polarized dwell time by δ-doping in a parallel double δ-magnetic-barrier nanostructure, which can be realized experimentally by depositing two asymmetric ferromagnetic stripes at the top and bottom of an InAs/Al x In1−x As heterostructure, respectively. Dwell time is still spin-polarized even if a δ-doping is included inside. Both the magnitude and the sign of the spin-polarized dwell time can be manipulated by changing the weight or position of δ-doping. Therefore, this nanostructure can be employed as a structurally controllable temporal spin splitter for spintronic device applications.

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“…Using the improved transfer matrix method (ITMM) [36], the reduced 1D Schrödinger equation (4) can be solved. In incident and outgoing regions, wave functions can be assumed as…”

Section: Theory and Methodsmentioning

confidence: 99%

Manipulation of a temporal electron-spin splitter via a δ-potential in an embedded magnetic-electric-barrier microstructure

Liu¹,

Tang²,

Liu³

et al. 2021

Commun. Theor. Phys.

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We theoretically explore the manipulation of a temporal electron-spin splitter by a δ-potential in an embedded magnetic-electric-barrier microstructure (EMEBM), which is constructed by patterning a ferromagnetic stripe and a Schottky-metal stripe on the top and bottom of an InAs/Al x In1−x As heterostructure, respectively. Spin polarization of the dwell time remains, even though a δ-potential is inserted by atomic-layer doping. Both the magnitude and sign of the spin-polarized dwell time can be manipulated by changing the weight or position of the δ-potential. Thus, a structurally controllable temporal electron-spin splitter can be obtained for spintronics device applications.

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Manipulating spin polarization via spin-orbit coupling in a magnetic microstructure constructed on surface of semiconductor heterostructure

Cited by 23 publications

References 30 publications

A numerical method to calculate dwell time for electron in semiconductor nanostructure

A numerical method to calculate dwell time for electron in semiconductor nanostructure

Controllable temporal spin splitter via δ-doping in parallel double δ-magnetic-barrier nanostructure

Manipulation of a temporal electron-spin splitter via a δ-potential in an embedded magnetic-electric-barrier microstructure

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