Main characteristics of Pb0.85Sm0.1TiO3 ferroelectric thin films with Bi2Ti2O7 buffer layer

Bi₄Ti₃O₁₂ and Bi_3.25La_0.75Ti₃O₁₂ Thin Films Prepared by RF Magnetron Sputtering

“…The influence of various buffer layers [11], the effects produced by electrode materials [12] and the multiple coatings of different kinds of perovskite dielectric thin films [13] were investigated for application to the high-density nonvolatile memory devices. The effects of various seeding layers on the properties of PZT and SBT thin films have also been studied [12,14,15].…”

EFFECT OF Ce-DOPING ON STRUCTURAL AND ELECTRICAL PROPERTIES OF DIELECTRIC Bi2Ti2O7 THIN FILMS

“…6 It has been successfully used as a buffer layer to improve the electrical properties of ferroelectric Bi 4 Ti 3 O 12 , 7,8 Na 0.5 Bi 0.5 TiO 3 , 9 PZT, 10 and PST. 11 Despite the above advantages, Bi 2 Ti 2 O 7 can be easily transformed into perovskite-type bismuth titanate phase Bi 4 Ti 3 O 12 at high temperature. 7,12 The X-ray diffraction (XRD) patterns shown that the sample is a mixed-phase structure, which includes Bi 2 Ti 2 O 7 and Bi 4 Ti 3 O 12 phases, as annealed at 600 • C for 15 min.…”

Leakage current behavior of La-doped Bi2Ti2O7 thin films by a chemical solution deposition method

“…Polycrystalline thin films of composition Bi 2 Ti 2 O 7 [6] have high permittivity and low leakage current. They have been used to improve the electrical properties of Bi 4 Ti 3 O 12 [6], PZT [7] and PST [8] ferroelectric thin films and considered promising gate materials for advanced MOS transistors [9]. Recently, Yao et al [10] has reported that the crystal of Bi 2 Ti 2 O 7 can be used as photocatalyst, which exhibits higher photocatalytic activity than the Degussa P-25.…”