UV photoresponse of n-ZnO/p-Silicon nanowire (SiNW) photodiodes is investigated by varying post-treatment conditions. Based on spectral responsivity measurement, the responsivity of our photodiodes decreases with increasing the post-annealing temperature in vacuum atmosphere, and the biggest responsivity reaches to as high as ~42 A/W under a reverse bias of 2V near 390 nm when the post-annealing temperature is at 100 °C. And the responsivity is higher when our devices are annealed in vacuum atmosphere than in oxygen atmosphere. We think that the higher responsitivity may be due to the smaller grain size and more oxygen-vacancy-related defects in ZnO film deposited at lower temperature. These results may benefit potential applications of n-ZnO/p-SiNW photodetectors in ultraviolet region.
Bi4Ti3O12 (BTO) and Bi3.25La0.75Ti3O12 (BLT) ferroelectric thin films were deposited on Pt/Si substrates by RF magnetron sputtering with Bi4Ti3O12 (BTO) and Bi3.25La0.75Ti3O12 (BLT) targets with 50-mm diameter and 5-mm thickness. The microstructure and ferroelectric properties of thin films were investigated. The grain growth behavior and ferroelectric properties such as remanent polarization were different in these two kinds of film, the effects of La doping in the BLT thin film were very obvious.
BiFeO3 and Eu/Co doped BiFeO3 thin films have been grown on Nb:SrTiO3 substrates with pulsed laser deposition using the same growth conditions. It was shown that the characteristic of resistive switching would be enhanced by Co doping. By changing the polarity of the external voltage, the BiFe0.95Co0.05O3 is witched between multilevel stable resistance states without an electroforming process. The resistance ratio is larger than two orders of magnitude and shows stable resistance states. The resistive switching is understood by the electric field-induced carrier trapping and detrapping, which changes the depletion layer thickness at the interface, oxygen vacancy and Co doping play important role in enhanced RS behavior. Keywords: Resistive switching, element doping, resistive switching mechanism.
Bi4-xLaxTi3O12 (BLT) ferroelectric thin films were deposited on Pt/Si substrates by RF magnetron sputtering with Bi4-xLaxTi3O12 (x=0.5, 0.75, 1) targets with 50-mm diameter and 5-mm thickness. The effects of La contents on microstructure and ferroelectric properties of Bi4-xLaxTi3O12 thin films were investigated. The grain growth behavior and ferroelectric properties such as remanent polarization were found to be dependent on the La contents in the BLT thin films.
we report reproducible resistive switching performance and relevant physical mechanism of Pt/La0.7Sr0.3MnO3/Nb0.05Bi0.95FeO3/Nb:SrTiO3 ferroelectric heterostructure which was fabricated by pulsed laser deposition. This device exhibits a nonvolatile resistive switching with a resistance ratio of up to 60 under 2V/-3V pulse voltages at room temperature. Low voltage readout, reliable resistance switching reproducibility and good time retention, indicating promise for non-destructive readout nonvolatile memories. In this metal/p-semiconductor/ferroelectric/n-semiconductor heterostructure, the mechanism of resistive switching behavior would be attributed to the ferroelectric polarization enhanced field-induced charge redistribution at the semiconductor/ferroelectric interface, resulting in the modulation of the interface barrier height. Keywords: Resistive switching, Ferroelectric resistive switching, Ferroelectric field effect.
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