Magnetron sputtered transparent conducting CdO thin films

Gurumurugan, K.; Mangalaraj, D.; Narayandass, Sa. K.

doi:10.1007/bf02666538

Cited by 70 publications

(27 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The main experimental error in Van-der-Pauw method is being due to the aluminum-contact spots size relative to sample's size, which is estimated to be about 5%. The measured electrical parameters of pure CdO film agree with that data published for CdO films prepared by different techniques [1,[19][20][21][22][23]. However, the resistivity of CdO, in the present work, is larger than those values mentioned in some other references ∼10 −3 to 10 −4 cm due to different method and procedure of preparation.…”

Section: Electrical Propertiessupporting

confidence: 87%

Transparent conducting properties of samarium-doped CdO

Dakhel

2009

Journal of Alloys and Compounds

101

View full text Add to dashboard Cite

Section: Electrical Propertiessupporting

confidence: 87%

Transparent conducting properties of samarium-doped CdO

Dakhel

2009

Journal of Alloys and Compounds

101

View full text Add to dashboard Cite

“…CdO films grown with 1 are phase-pure, highly textured, highly conductive, and optically transparent. The charge transport properties compare favorably with the highest conductivities reported in the literature for CdO thin films grown by magnetron sputtering (~3700 S cm ±1 ), [22] activated reactive evaporation (~5000 S cm ±1 ), [23] and MOCVD (~500 S cm ±1 ), [13] while the room temperature mobility of the present films (147 cm 2 V ±1 s ±1 ) is higher than those reported for the magnetron sputtering and activated reactive evaporationderived films, 100 cm 2 V ±1 s ±1 and 135 cm 2 V ±1 s ±1 , respectively. The efficacy of 1 in oxide film growth by MOCVD should allow systematic structure±composition±charge transport studies of broad new families of doped, CdObased TCOs.…”

supporting

confidence: 70%

Transparent Conducting CdO Thin Film Growth Using a Highly Volatile, Thermally and Air-Stable Cadmium Precursor

Babcock¹,

Wang²,

Metz³

et al. 2001

Chem. Vap. Deposition

View full text Add to dashboard Cite

The growth and properties of transparent conducting oxides (TCOs) have recently been the subject of intense academic and industrial investigation. [1] This reflects a plethora of technologically important TCO applications ranging from photovoltaic (PV) cells to flat-panel displays and organic light-emitting diodes. While tin-doped indium oxide (ITO) has been heavily studied as the TCO layer for a variety of opto-electronic applications (including transparent electrodes for PVs), [1] and reports have documented the growth of ITO films via numerous techniques, ITO is not ideally suited for use in future PV systems. Reasons include less than optimum conductivity and transparency, high cost, and cation diffusion between ITO and the Cd chalcogenide PV-active layers. [2] To address this problem, thin films of the Cd-containing TCO, cadmium stannate (Cd 2 SnO 4 ), have recently been grown by rf sputtering. [3] These films exhibit promising electrical and optical properties, including a high carrier mobility (59.6 cm 2 V ±1 s ±1 ). [3] However, the lack of suitable Cd precursors has so far impeded the growth of Cd 2 SnO 4 , or any other Cd-based TCO thin film grown by efficient CVD techniques. Thin films of the parent TCO, CdO, have been extensively studied and are known to be highly conductive, primarily due to various defect structures. While CdO has a modest intrinsic bandgap (~2.3 eV), [4] it serves as an excellent model material for the development of TCO CVD processes. Furthermore, previous work in this laboratory and elsewhere has shown that n-type aliovalent doping of CdO has profound effects on the electronic structure, significantly enhancing both the conductivity and the bandgap by introducing n-type charge carriers [5±8] and therefore blueshifting the band edge via a Burstein±Moss shift. [5,6,9] Metal±organic (MO) CVD is a widely used film growth process which complements physical vapor deposition techniques such as rf sputtering, and certain characteristics of MOCVD are particularly attractive for TCO thin film growth. Growth conditions are closer to ambient, growth at higher O 2 partial pressures is possible, conformal coverage over complex three-dimensional features can be achieved, and the process is amenable to very large-scale depositions. All these attractions afford a technique engineered for maximum overall growth efficiency and diverse applications. However, a crucial feature for a useful MOCVD growth process is the necessity of highly volatile, thermally stable, easy to handle, metal±organic precursors. Such precursors must decompose cleanly at the substrate surface during film growth since premature decomposition causes involatile metal species that remain in the precursor reservoir, while complexes that are too thermally stable decompose incompletely, thereby contaminating the reactor and resultant films.To date, growth of Cd-containing films via MOCVD has only been achieved using dimethylcadmium (CdMe 2 ) or its derivatives as precursors. While CdMe 2 can be used for the growth of the heavier C...

show abstract

“…The peaks are due to bond vibrational energy of Cd-O at 545 cm -1 . The small hump at 620 cm -1 is also attributed to CdO (Gurumurugan et al 1996). These characteristic absorption peaks, which are very similar to those of hydroxide carbonate salts, revealed that the as-synthesized precursor nanoparticles contain OH -, CO 3 2-ions and Cd-O bond.…”

Section: Ft-ir and Uv-visible Spectramentioning

confidence: 62%

Dielectric relaxation of CdO nanoparticles

Tripathi¹,

Dutta

Das

et al. 2015

Appl Nanosci

View full text Add to dashboard Cite

Nanoparticles of cadmium oxide have been synthesized by soft chemical route using thioglycerol as the capping agent. The crystallite size is determined by X-ray diffraction technique and the particle size is obtained by transmission electron microscope. The band gap of the material is obtained using Tauc relation to UV-visible absorption spectrum. The photoluminescence emission spectra of the sample are measured at various excitation wavelengths. The molecular components in the material have been analyzed by FT-IR spectroscopy. The dielectric dispersion of the material is investigated in the temperature range from 313 to 393 K and in the frequency range from 100 Hz to 1 MHz by impedance spectroscopy. The ColeCole model is used to describe the dielectric relaxation of the system. The scaling behavior of imaginary part of impedance shows that the relaxation describes the same mechanism at various temperatures. The frequency-dependent electrical data are also analyzed in the framework of conductivity and electrical modulus formalisms. The frequency-dependent conductivity spectra are found to obey the power law.

show abstract

Magnetron sputtered transparent conducting CdO thin films

Cited by 70 publications

References 24 publications

Transparent conducting properties of samarium-doped CdO

Transparent conducting properties of samarium-doped CdO

Transparent Conducting CdO Thin Film Growth Using a Highly Volatile, Thermally and Air-Stable Cadmium Precursor

Dielectric relaxation of CdO nanoparticles

Contact Info

Product

Resources

About