In this report, we demonstrate the observation of visible cathodoluminescence (CL) of Er-doped amorphous AlN films produced by sputtering. Optical transmission studies point out that the films are highly transparent and the band gap is about 5.61 eV. Elemental analysis by Rutherford backscattering spectrometry shows that AlN films are stoichiometric. X-ray diffraction measurements reveal that the films retain the amorphous structure even after annealing in N2 ambient at 1000 °C. The sharp characteristic emission lines in the CL spectra correspond to Er3+ intra-4fn shell transitions and are observed over the temperature range of 9–330 K. The results indicate the suitability of Er-doped amorphous AlN films for light-emitting device applications.
Transparent conducting cadmium oxide (CdO) films have been deposited by spray pyrolysis. The film thicknesses have been determined using Rutherford backscattering spectrometry. X-ray diffraction measurements show that the films are polycrystalline with a preferential orientation along the (1 11) diffraction plane and the lattice parameter has been calculated. The dislocation density and strain have also been evaluated. The films possess a transmittance of about 75% in the visible and near-infrared region. The refractive index is found to vary between 1.68 and 2.84 in the wavelength range 500-1500 nm. The values of indirect and direct bandgaps obtained are 1.98 and 2.32 eV respectively. Hall effect measurements have been carried out in the temperature range 304-349 K. Resistivity, carrier concentration and mobility of the films at room temperature have been evaluated as 6.6 x m2 V-' s-' respectively. Thermoelectric power values from thermoelectric power measurements carried out in the temperature range 304-376 K have been found to be about 19.7-89 I.CV K-'. Laser damage studies performed at a wavelength of 1.06 p m indicate that the films possess a damage threshold density of about 2.37 x lo4 J m-2. Q m, 1.4 x loz5 m-3 and 0.68 x
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