Magnetoresistant La1−xSrxMnO3 films by pulsed injection metal organic chemical vapor deposition: effect of deposition conditions, substrate material and film thickness

Hafnium oxoneopentoxide as a new MOCVD precursor for hafnium oxide films

“…Pulsed injection MOCVD (PI-MOCVD) technique elaborated commonly at LMGP-Grenoble and Vilnius University [17][18][19] was applied for the evaluation of Hf 3 O(ONep) 10 for HfO 2 film deposition. The principle of PIMOCVD is based on repetitive injections of microdoses of solution of a volatile metalorganic precursor, flash evaporation, vapor transport by a carrier gas (Ar and O 2 ), and decomposition on a hot substrate.…”

Influence of molar ratio of citric acid to metal ions on preparation of La0.67Sr0.33MnO3 materials via polymerizable complex process

“…Chemical methods include sol-gel techniques, 10 metallo-organic decomposition (MOD), 11 and chemical vapor deposition (CVD). 12 Temperatures used in the application of chemical processes are usually lower (400-800 • C) than the ones used in physical methods.…”

Cobalt (II) β-diketonate adducts as new precursors for the growth of cobalt oxide films by liquid injection MOCVD

“…A vertical hot-wall PIMOCVD reactor was used for the depositions. Detailed description of this technique and reactor is given elsewhere [27][28][29]. One advantage of liquid injection CVD over classical CVD is that it places less demands on the precursor in terms of volatility and stability [27,30,31].…”