Hafnium oxoneopentoxide as a new MOCVD precursor for hafnium oxide films

Abrutis, A.; Hubert‐Pfalzgraf, Liliane G.; Pasko, Sergej; Bartasyte, Ausrine; Weiss, F.; Janickis, Vitalijus

doi:10.1016/j.jcrysgro.2004.04.012

Cited by 27 publications

(11 citation statements)

References 23 publications

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“…For C and H, the ion intensity was converted to the atomic concentration taking the sensitivity of each element into account. The C concentration seen in Figure 4b is comparable to that reported for HfO 2 films prepared by conventional CVD and ALD, [15][16][17] even though the VALID process was performed at room temperature. The H concentration was more than 10 22 atoms per cm 3 .…”

Section: Growth Resultssupporting

confidence: 77%

Development of an Automated Vapor/Liquid Hybrid Deposition System to Form High-kDielectrics

Hojo

Xuan

Yasuda

2006

Chem. Vap. Deposition

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Vapor/liquid hybrid deposition (VALID) is a modified atomic layer deposition (ALD) method that combines adsorption of metal precursors from the vapor phase with their hydrolysis from the liquid phase. This paper is a report of the development of an automated VALID apparatus that performs the adsorption/hydrolysis processes with a reasonable throughput. HfO 2 films have been successfully produced with this automated system using Hf(O t C 4 H 9 ) 4 [hafnium tetra-tert-butoxide (HTB)]as the precursor. A brief discussion is given on the contribution of multilayer adsorption of HTB to the observed deposition rates.

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Section: Growth Resultssupporting

confidence: 77%

Development of an Automated Vapor/Liquid Hybrid Deposition System to Form High-kDielectrics

Hojo

Xuan

Yasuda

2006

Chem. Vap. Deposition

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“…It is found that compared with Si 3 N 4 , the use of a PZT/HfO 2 multilayered dielectric enables the realization of a high equivalent dielectric constant of 79-82 and a low leakage current density after a bias stressing time of 4 10 s, resulting in a an efficient switching isolation and a very low power consumption. Many the techniques have been used to fabricate HfO 2 thin films, such as sputtering [7], the sol-gel method [8], atomic layer deposition [9], and metal-organic chemical vapor deposition (MOCVD) [10]. The sol-gel method generally offers significant advantages in the film fabrication of electronic materials, such as high purity, ease of composition control, relatively low processing temperature and large deposition area [11].…”

Section: Introductionmentioning

confidence: 99%

Preparation of hafnium oxide thin films by sol–gel method

et al. 2007

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Hafnium oxide (HfO 2 ) films were grown on SiO 2 /Si substrates by a sol-gel method, and their crystalline structure, microstructure and electrical properties were investigated. X-ray diffraction analysis indicated that the monoclinic HfO 2 films could be obtained by annealing at 500°C. A transmission electron microscopy (TEM) image showed that the films were grown as a spherulite grain structure with a mean grain size of approximately 15 nm. The dielectric constant of the HfO 2 films of 300 nm was approximately 21.6, and the current-voltage measurements showed that the leakage current density of the HfO 2 films was approximately 1.14×10 −5 A/cm 2 at an applied electric field of 100 kV/cm. The sol-gel method-fabricated HfO 2 films are concluded to be feasible for MEMS applications, such as capacitive-type MEMS switches.

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“…Recently, new hafnium homoleptic alkoxide compounds fully saturated, such as Hf(dmae) 4 (dmae = dimethylaminoethoxide) [15] and Hf(mmp) 4 (mmp = 1-methoxy-2-methyl-2-propanolate), [16] and heteroleptic complexes such as [17] and Hf(O i Pr) 2 (tbaoac) 2 (tbaoac = tert-butylacetoacetato), [18] have been successfully used as they simultaneously inhibit oligomerization and increase the coordination number of the central metal. Moreover, the tetrahydroxyldiethylamide, Hf(ONEt 2 ) 4 , [19] (more stable than the coordinatively unsaturated Hf(NEt 2 ) 4 ) and multinuclear compounds like Hf 3 O(ONep) 10 (Nep = neopentyl) [20] have been investigated and employed.…”

Section: Introductionmentioning

confidence: 99%

Growth of Hafnium Dioxide Thin Films by MOCVD Using a New Series of Cyclopentadienyl Hafnium Compounds

Carta¹,

Habra²,

Rossetto³

et al. 2007

Chemical Vapor Deposition

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Thin films of HfO 2 are grown by metal-organic (MO)CVD on Si(001) and fused quartz substrates in the temperature range 400-500°C, using a new series of bis-cyclopentadienyl bis-amino-alkoxide hafnium precursors, namely [(C 5 H 5 ) 2 Hf{OC(CH 3 ) 2 CH 2 N(CH 3 ) 2 } 2 ] and [(C 5 H 5 ) 2 Hf{OCH(CH 3 )CH 2 N(CH 3 ) 2 } 2 ], stable in air because of their strong coordination to the metal center. The films obtained are investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS), and atomic force microscopy (AFM). Monoclinic phase HfO 2 (baddeleyite) films, characterized by a correct stoichiometric ratio and a granular surface morphology with a roughness/thickness ratio that decreases with increasing deposition rate, are obtained.

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Hafnium oxoneopentoxide as a new MOCVD precursor for hafnium oxide films

Cited by 27 publications

References 23 publications

Development of an Automated Vapor/Liquid Hybrid Deposition System to Form High-kDielectrics

Development of an Automated Vapor/Liquid Hybrid Deposition System to Form High-kDielectrics

Preparation of hafnium oxide thin films by sol–gel method

Growth of Hafnium Dioxide Thin Films by MOCVD Using a New Series of Cyclopentadienyl Hafnium Compounds

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