Nanophasic tungsten oxides thin films have been deposited at 500 °C on quartz and glass substrates starting from W(CO)6 using the metal organic chemical vapor deposition technique (MOCVD). Two series of deposition experiments were carried out to make a comparison between the results obtained employing, as reactant gases, O2 mixed with water vapor and a dry mixture of N2 with 25% H2, respectively. The obtained tungsten oxides were analyzed by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) in order to investigate their microstructure, chemical composition, and surface morphology. In this work, XPS analyses of two tungsten oxides thin films deposited in different atmospheres are presented. Besides the wide scan spectra, charge corrected binding energies for the W 4f7/2, W 4f5/2, O ls, and C 1s surface photoelectron signals are reported. In particular, the film obtained in H2 atmosphere shows the presence of W in an oxidation state lower than VI.
The uranium-tin complex (cp)&J-SnPh3 (cp = v5-C5H5) has been prepared from (cp),UNEt2 and HSnPh3, and its crystal structure determined; it provides the first example of a compound with a uranium-tin bond.
The chemical environment of Co sites in CoAl2O4 layers grown by metal−organic chemical vapor deposition has been investigated by X-ray absorption spectroscopy (XAS) and X-ray diffraction (XRD). It is shown that the air- or [O2 + H2O]-annealing at 500 °C of the layers deposited at low temperature induce a partial crystallization with the formation of (Co1−2ηAl2η)(Co2ηAl2(1−η))O4 spinel (η = 0.2−0.27). Nevertheless, slightly more than half of Co remains in an amorphous phase, and XAS data are consistent with the formation of a medium-range ordered Co3O4 phase, especially upon air-annealing. Layers grown at higher temperatures (600−650 °C) exhibit a similar but more complex structure, since the presence of an additional medium-range ordered phase (likely, CoAl2O4) is also revealed. The air-annealing at high temperature (800 °C) generates blue, almost completely crystalline, CoAl2O4 layers. Optical properties of deposited layers are discussed by referring to the outcomes of structural results. In particular, the optical absorption spectrum results negligibly affected by the presence of the amorphous phase, while absorptions present in the 300−500 nm range, responsible for the green layer color and evident in samples annealed in an oxidizing atmosphere or grown at high temperature, are likely caused by the octahedrally coordinated Co ions of the partially inverted spinel (Co1−2ηAl2η)(Co2ηAl2(1−η))O4 phase. Despite the XRD analysis that ultimately demonstrates the presence of octahedrally coordinated Co ions, whose oxidation state in the spinel phase is in majority Co(II), the occurrence of Co(III) species with an octahedral environment cannot be ruled out
Thin films of MgO are grown by CVD, with a high growth rate, on Si(001) and quartz substrates in the temperature range 400-550°C, using bis(methylcyclopentadienyl)magnesium [Mg(CH 3 -C 5 H 4 ) 2 ] as the precursor. The films obtained are investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and optical absorption, in order to investigate the interrelations between film properties and processing conditions. Cubic phase MgO (periclase) films, characterized by a low carbon contamination and a granular surface morphology, are obtained.
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