Cobalt (II) β-diketonate adducts as new precursors for the growth of cobalt oxide films by liquid injection MOCVD

CVD of Metals Using Alcohols and Metal Acetylacetonates, Part I: Optimization of Process Parameters and Electrical Characterization of Synthesized Films

“…Finally, the required stoichiometry can be achieved more easily in contrast to conventional CVD, where changes in the overall vaporization rate during the process may lead to changes in the stoichiometry of the film. [21][22][23] Liquid injection CVD is also a useful method for multi-component systems, where a precursor solution with the desired stoichiometry can be used as feedstock.…”

Growth Kinetics, Composition, and Morphology of Co3O4 Thin Films Prepared by Pulsed Liquid‐Injection MOCVD

“…[2,12±23] Different Co II b-diketonate complexes, such as Co(acac) 2 (acac = 2,4-pentanedionate), [2,12±18] Co-(thd) 2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedione), [19] Co(hfac) 2 -2 H 2 O (hfa = CF 3 C(O)CHC(O)CF 3 ), [20] and Co(hfac) 2 -2 H 2 O-tetraglyme adducts (tetraglyme = 2,5,8,11, 14-pentaoxapentadecane), [21] have been used as organometallic precursors to prepare thin films of CoO, Co 3 O 4 , or a mixture of both phases. The recently developed technique of pulsed liquid injection (PI) MOCVD has been previously applied for the preparation of Co 3 O 4 films by using Co(acac) 2 , Co(thd) 2 , and new adducts such as Co(acac) 2 -tetraglyme, [22,23] Co(thd) 2 -tetraglyme, [22,23] Co(acac) 2 -TME-DA (N,N,N¢,N¢-tetramethylethylenediamine), [22] [Co(acac) 2 (DMAPH)] 2 (1-dimethylamino-2-propanol), [23] and Co-(acac) 2 (DMAEH) (2-dimethyaminoethanol). [23] In this paper we report on the preparation and characterization of Co 3 O 4 layers grown on silicon substrates by PIMOCVD using Co(thd) 2 and monoglyme solvent.…”

Effect of Co-doping on Microstructural, Crystal Structure and Optical Properties of Ti[sub 1−x]CO[sub x]O[sub 2] Thin films Deposited on Si Substrate by MOCVD Method

“…Deposition parameters as mentioned above and the new metal organic compound Co(TMHD)3 were used. Cobalt oxide thin films were usually deposited by using Co(acac)2 (acac=acetylacetonate) and Co(OAc)2 (OAc=acetate) precursors [15]. These two precursors have been used for MOCVD of pure CoO thin films.…”

“…Co(TMHD)3 has better stability than two others above as a monomer, because each Pdiketonate ligand with bulky tert-butyl substituents occupied two coordination sites of the metal and also has an appreciable volatility (vaporization already at 90°C). With this compound, the stoichiometry of COxOy could be controlled easily [15], so one could be permitted high solubility of Co into TiOi matrix. Besides, this compound was relatively stable to air and moisture and could be easily prepared and purified [17].…”