Magnetopolaron effect on shallow donors in GaAs

Cheng, Jiping; McCombe, B. D.; Shi, J.M.; Peeters, F. M.; Devreese, J. T.

doi:10.1103/physrevb.48.7910

Cited by 51 publications

(33 citation statements)

References 21 publications

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“…7 represent the overlapping theoretical and experimental results which have been digitized from Ref. [10]. These lines also coincide well with the Raman data, which confirms the presented interpretation.…”

Section: Magnetic Field Induced Metal-insulator Transition and Magnetsupporting

confidence: 86%

“…In Fig. 7 the positions of the 1s−2p + and 1s−2p 0 transitions measured in the Raman scattering experiments is compared with those reported previously from far-infrared absorption studies on n-type GaAs [10]. Dashed lines in Fig.…”

Section: Magnetic Field Induced Metal-insulator Transition and Magnetmentioning

confidence: 77%

“…Experiments were performed in a wide range of magnetic fields up to 28 T, which cover the limit of cyclotron frequency exceeding the LO frequency of the insulating material. These studies are complementary to the more common, far-infrared absorption investigations of such effects [10][11][12][13][14][15][16][17]. However, the latter experiments probe the transverse plasma excitations which, in addition, are characterized by very small k-vectors provided by far infrared light.…”

Section: Introductionmentioning

confidence: 94%

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Magnetized Plasma in Polar Semiconductors

Wysmołek

2007

Acta Phys. Pol. A

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Plasma excitations in metallic n-type GaAs are studied in high-magnetic fields using the method of inelastic light scattering (the Raman scattering). Experimental data are analyzed using a standard, dielectric function theory. The results obtained for samples with a high electron concentration are well understood in terms of longitudinal excitations. A strong interaction of coupled longitudinal optical-phonon-plasmon modes with the collective cyclotron resonance excitations (the Bernstein modes) is observed. In samples with a lower electron concentration, the unexpected feature in the vicinity of the undressed optical phonon is observed at high magnetic fields. This effect is explained in terms of transverse excitations, which would appear in the Raman spectrum due to disorder-activated selection-rule breaking. A field induced metal-insulator transition and magnetopolaron effect on shallow donors in GaAs is shown to be traced with the Raman scattering experiments in samples with the lowest electron concentration.

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Section: Magnetic Field Induced Metal-insulator Transition and Magnetsupporting

confidence: 86%

Section: Magnetic Field Induced Metal-insulator Transition and Magnetmentioning

confidence: 77%

Section: Introductionmentioning

confidence: 94%

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Magnetized Plasma in Polar Semiconductors

Wysmołek

2007

Acta Phys. Pol. A

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“…Since, according to the applied model, the experimentally observed splitting should be twice ⌬ 1 , it would be expected that the splitting of the 1s-2p +1 transition should be about 9.6 meV for oxygen and 6.2 meV for silicon. These values are of the same order as those observed for the magnetopolaron effect on the 1s -2p +1 transition in GaAs 10 and CdTe. 14 However, a direct comparison of these results is difficult since the magnetopolaron effect depends not only on the Fröhlich constants and the LO phonon energy, but also on other parameters such as the donor binding energy.…”

Section: Discussionsupporting

confidence: 74%

“…3,4 The splitting of the donor states resulting from the resonant interaction with the LO phonon provides a direct measure of the electron-phonon interaction. [5][6][7] That is why the resonant magnetopolaron effect has been widely studied in bulk semiconductors 3,4,8,9 as well as in low-dimensional systems including quantum wells 10,11 and quantum dots. 12,13 In the classical far-infrared experiments the intradonor 1s-2p +1 transition energy 10,14 or cyclotron frequency 11 has been tuned by means of a high magnetic field into resonance with the LO phonon energy.…”

Section: Introductionmentioning

confidence: 99%

Magnetopolaron effect on shallow donors in GaN

et al. 2006

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Resonant interaction between longitudinal-optic ͑LO͒ phonons and electrons bound on shallow donors in GaN is studied using magnetoluminescence of neutral-donor bound excitons ͑D 0 X͒. The experiments were performed on high-quality freestanding GaN material and heteroepitaxial GaN layers grown on sapphire. In addition to the principal recombination channel of D 0 X, in which donors are left in their ground states, two-electron satellites ͑TES͒ involving different excited donor excitations, as well as replicas of the principal D 0 X transition due to LO phonons, were observed for the oxygen and silicon donors. In order to separate transitions involving ground and excited D 0 X states, variable-temperature experiments were performed. The application of high magnetic fields allows tuning of the donor excitations into resonance with the LO phonon energy. This results in a strong enhancement of TES intensity and the appearance of several anticrossing processes in the vicinity of a LO phonon replica of the principal D 0 X transition. The observed behavior is explained in terms of a resonant interaction between LO phonons and donor-bound electrons ͑magnetopolaron effect͒. The experimental data are described using a phenomenological model that combines the theory of a hydrogen atom in a magnetic field with a model which includes the effects of nonparabolicity, nonresonant polaron corrections, and the resonant magnetopolaron effect on electrons bound to donors. It was found that the interaction in the resonant magnetopolaron regime is stronger for the oxygen than for the silicon donor.

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Polarons

Devreese

2003

Digital Encyclopedia of Applied Physics

132

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Magnetopolaron effect on shallow donors in GaAs

Cited by 51 publications

References 21 publications

Magnetized Plasma in Polar Semiconductors

Magnetized Plasma in Polar Semiconductors

Magnetopolaron effect on shallow donors in GaN

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